Demand for high-performance processors for AI training is skyrocketing, and consequently so is the demand for the components that go into these processors. So much so that SK hynix this week is very publicly announcing that the company's high-bandwidth memory (HBM) production capacity has already sold out for the rest of 2024, and even most of 2025 has already sold out as well.

SK hynix currently produces various types of HBM memory for customers like Amazon, AMD, Facebook, Google (Broadcom), Intel, Microsoft, and, of course, NVIDIA. The latter is an especially prolific consumer of HBM3 and HBM3E memory for its H100/H200/GH200 accelerators, as NVIDIA is also working to fill what remains an insatiable (and unmet) demand for its accelerators.

As a result, HBM memory orders, which are already placed months in advance, are now backlogging well into 2025 as chip vendors look to secure supplies of the memory stacks critical to their success.

This has made SK hynix the secnd HBM memory vendor in recent months to announce that they've sold out into 2025, following an earlier announcement from Micron regarding its HBM3E production. But of the two announcements, SK hynix's is arguably the most significant yet, as the South Korean firm's HBM production capacity is far greater than Micron's. So while things were merely "interesting" with the smallest of the Big Three memory manufacturers being sold out into 2025, things are taking a more concerning (and constrained) outlook now that SK hynix is as well.

SK hynix currently controls roughly 46% - 49% of HBM market, and its share is not expected to drop significantly in 2025, according to market tracking firm TrendForce. By contrast, Micron's share on HBM memory market is between 4% and 6%. Since HBM supply of both companies is sold out through the most of 2025, we're likely looking at a scenario where over 50% of the industry's total HBM3/HBM3E supply for the coming quarters is already sold out.

This leaves Samsung as the only member of the group not to comment on HBM demand so far. Though with memory being a highly fungible commodity product, it would be surprising if Samsung wasn't facing similar demand. And, ultimately, all of this is pointing towards the indusry entering an HBM3 memory shortage.

Separately, SK hynix said that it is sampling 12-Hi 36GB HBM3E stacks with customers and will begin volume shipments in the third quarter.

Just over 18 months ago, Intel launched their significantly revised ATX v3.0 power supply standard, and with it, the 600 Watt-capable 12VHPWR cable to power video cards and other high-drain add-in cards. The release of the standard came with a lot of fanfare and excitement – the industry was preparing for a future where even flagship video cards could go back to being powered by a single cable – but shortly after, things became exciting again for all the wrong reasons.

The new 12VHPWR connector proved to be less forgiving of poor connections between cables and devices than envisioned. With hundreds of watts flowing through the relatively small pins – and critically, insufficient means to detect a poor connection – a bad connection could result in a thermal runaway scenario, i.e. a melted connector. And while the issue was an edge case overall, affecting a fraction of a fraction of systems, even a fraction is too much when you're starting from millions of PCs, never mind the unhappy customers with broken video cards.

So the PC industry is taking a mulligan on the matter, quickly revising the ATX specification and the 12VHPWR connector to fix their design flaws. In its place we have the new ATX v.3.1 power supply specification, as well as the associated 12V-2×6 connector, the combination of which are intended to serve the same goals, but with far less of a chance of errant electricity causing damage.

Ultimately, the combination of the two new standards has required backwards-compatible changes on both the device (video card) side, as well as the power supply side. And as a result, power supply manufacturers are now in the process of releasing ATX v3.1-compliant PSUs that implement these revisions. For PSU vendors, the changes are relatively trivial overall, but they are none the less important changes that for multiple reasons, they are making sure to promote.

Getting down to business, the first ATX v3.1 power supply to enter our testing labs comes from ADATA sub-brand XPG, a prolific player in the PSU market. XPG recently expanded its product lineup with the introduction of the Core Reactor II VE series, the company's first foray into ATX 3.1-compliant PSUs. As a direct successor of the Core Reactor II series, the Core Reactor II VE is a relatively simple 80Plus Gold unit that distinguishes itself with its straightforward design, aimed at providing steady performance without the high expense.

In today’s review, we are taking a look at the 850W version of the Core Reactor II VE series, which is, for the time being, the most powerful ATX 3.1 unit XPG offers.

As part of AMD's Q1'2024 earnings announcement this week, the company is offering a brief status update on some of their future products set to launch later this year. Most important among these is an update on their Zen 5 CPU architecture, which is expected to launch for both client and server products later this year.

Highlighting their progress so far, AMD is confirming that EPYC "Turin" processors have begun sampling, and that these early runs of AMD's next-gen datacenter chips are meeting the company's expectations.

"Looking ahead, we are very excited about our next-gen Turin family of EPYC processors featuring our Zen 5 core," said Lisa Su, chief executive officer of AMD, at the conference call with analysts and investors (via SeekingAlpha). "We are widely sampling Turin, and the silicon is looking great. In the cloud, the significant performance and efficiency increases of Turin position us well to capture an even larger share of both first and third-party workloads."

Overall, it looks like AMD is on-track to solidify its position, and perhaps even increase its datacenter market share with its EPYC Turin processors. According to AMD, the company's server partners are developing a 30% larger number of designs for Turin than they did Genoa. This underscores how AMD's partners are preparing for even more market share growth on the back of AMD's ongoing success, not to mention the improved performance and power efficiency that the Zen 5 architecture should offer.

"In addition, there are 30% more Turin platforms in development from our server partners, compared to 4th Generation EPYC platforms, increasing our enterprise and with new solutions optimized for additional workloads," Su said. "Turin remains on track to launch later this year."

AMD's EPYC 'Turin' processors will be drop-in compatible with existing SP5 platforms (i.e., will come in an LGA 6096 package), which will facilitate its faster ramp and adoption of the platform both by cloud giants and server makers. In addition, AMD's next-generation EPYC CPUs are expected to feature more than 96 cores and a more versatile memory subsystem.

The PCI-SIG sends word over this morning that the special interest group has completed their development efforts on the group’s new PCI-Express cabling standard, CopprLink. Designed to go hand-in-hand with PCIe 5.0 and PCIe 6.0, CopprLink defines both internal and external copper cabling for the latest PCIe standards, giving system vendors and assemblers the ability to use wires to connect devices within a system, or even whole systems.

The CopprLink standard is, in practice, a pair of standards sharing the same brand-name under the PCI-SIG umbrella. The internal standard, “CopprLink Internal Cable”, is designed to allow for a new generation of PCIe cables up to 1 meter in length that are capable of sustaining PCIe 5.0 and PCIe 6.0 signaling. Internal CopprLink effectively supplants a host of older internal PCIe cabling standards (including the abandoned OCuLink), which were originally designed for earlier generations of PCIe signaling.

At a high level, internal CopprLink is intended to provide not only host-to-device connectivity, but even more transparent backhaul applications such as motherboard-to-backplane connectivity, and unique applications such as chip-to-chip PCIe connections. In other words, CopprLink allows for cabled PCIe to be used in almost any situation where a PCIe connection needs to be established within a system. Strictly speaking, CopprLink doesn't replace the PCIe CEM connector in any way – but the relatively thick copper cables have less signal loss than PCB traces, making a cabled standard extremely useful even for internal connections. PCI-SIG sees CopprLink cables taking hold in the storage and data center markets, product categories where we already see PCIe cabling in use today.

The companion connector standard for internal CopprLink is the SNIA-developed SFF-TA-1016 connector, which bears more than a passing resemblance to the widely-used SFF-8654 (SlimSAS) connector. SFF-TA-1016 is available in x4, x8, and x16 configurations, and while the PCI-SIG doesn’t go so far as to defining widths within their own standard, the connectors available paint a clear picture of the options at hand. Internal CopprLink x4 should be especially popular with storage, as we already see today.

Top: SFF-TA-1016 Family of Connectors (Figure 4-1, Image Courtesy SNIA)
Bottom: Sample SFF-TA-1016 x4 Contact Plug and Recepticle (Figure 4-2, Image Courtesy SNIA)

Meanwhile, the group has also developed an external cabling standard to cover those same PCIe 5.0/6.0 data rates. External CopprLink cables can go up to 2 meters, allowing for board-to-board connections within a rack, and even short rack-to-rack PCIe connections.

The external version of CopprLink also uses a more robust connector, relying on SNIA’s SFF-TA-1032 standard. Like internal/1016, this is available with x4, x8, and x16 configurations, using 44, 68, and 120 positions/pins respectively. The PCI-SIG is expecting this version of the standard to be primarily adopted by the AI/Machine Learning markets, which need to move heaps of data between systems. Notably, however, they don’t really expect the storage market to make use of this spec – instead, they’ll be served by an updated version of the classic PCI Express External Cabling standard.

SFF-TA-1032 x16 Plug and Connector (Figure 4-1, Image Courtesy SNIA)

Finally, a bit farther out on the group’s roadmap, PIG-SIG is also reiterating that they’re working on a new optical cabling standard as well. The workgroup for this project was established in 2023, so the project is still in its early days. Notably, the forthcoming optical standard is intended to be optical technology-agnostic, allowing for PCIe to be paired with a variety of optical technologies.

In the meantime, with the internal and external CopprLink standards completed, the PCI-SIG is hoping to quickly move this cabling into production. Since these are solely cabling standards – and thus don’t require intensive development efforts such as new controllers or the like – the group is hoping that their members will have something to show off in time for the group’s developer conference this summer, or the Flash Memory Summit in August. After which, hardware vendors should be able to deploy the new cables relatively quickly.

As part of Samsung's Q1 earnings announcement, the company has outlined some of its foundry unit's key plans for the rest of the year. The company has confirmed that it remains on track to meeting its goal of starting mass production of chips on its SF3 (3 nm-class, 2nd Generation) technology in the second half of the year. Meanwhile in June, Samsung Foundry will formally unveil its SF2 (2 nm-class) process technology, which will offer a mix of performance and efficiency enhancements. Finally, the company the company is preparing a variation of its 4 nm-class technology for integration into stacked 3D designs.

SF2 To Be Unveiled In June

Samsung plans to disclose key details about its SF2 fabrication technology at the VLSI Symposium 2024 on June 19. This will be the company's second major process node based upon gate-all-around (GAA) multi-bridge channel field-effect transistors (MBCFET). Improving over its predecessor, SF2 will feature a 'unique epitaxial and integration process,' which will give the process node higher performance and lower leakage than traditional FinFET-based nodes (though Samsung isn't disclosing the specific node they're comparing it to).

Samsung says that SF2 increases performance of narrow transistors by 29% for N-type and 46% for P-type, and wide transistors by 11% and 23% respectively. Moreover, it reduces transistor global variation by 26% compared to FinFET technology, and cuts product leakage by approximately 50%. This process also sets the stage for future advancements in technology through enhanced design technology co-optimization (DTCO) collaboration with its customers.

One thing that Samsung has not mentioned in context of SF2 is backside power delivery, so at least for the moment, there is no indication that Samsung will be adopting this next-gen power routing feature for SF2.

Samsung says that the design infrastructure for SF2 – the PDK, EDA tools, and licensed IP – will be finalized in the second quarter of 2024. Once this happens, Samsung's chip development partners will be able to begin designing products for this production node. Meanwhile, Samsung is already working with Arm to co-optimize Arm's Cortex cores for the SF2 process.

SF3: On Track for 2H 2024

As the first fab to introduce a GAAFET-based node, Samsung has been on the cutting edge of chip construction. At the same time, however, that has also meant that they're the first fab to encounter and solve the inevitable teething issues that come with such a major transistor design change. Consequently, while Samsung's first-generation SF3E process technology has been in production for a little less than two years now, the only publicly-disclosed chips made on the process so far have been relatively small cryptocurrency mining chips – exactly the kind of pipecleaner parts that do well on a new process node.

But with that experience in hand, Samsung is preparing to move on to making bigger and better chips with GAAFETs. As part of their earnings announcements, the company has confirmed that their updated SF3 node, which was introduced last year, remains on schedule to enter production in the second half of 2024.

A more mature product from the get-go, SF3 is being prepared to be used for building larger processors, including datacenter products. Compared to its direct predecessor, SF4, SF3 promises a 22% performance boost at the same power and transistor count, or a 34% lower power at the same frequency and complexity, as well as a 21% logic area reduction. In general, Samsung pins a lot of hopes on this technology, as it's this generation of their 3nm-class technology that is poised to compete against TSMC's N3B and N3E nodes.

SF4: Ready for 3D Stacking

Finally, Samsung is also preparing a variant of their final FinFET technology node, SF4, for use in 3D chiplet stacking. As transistor density improvements have continued to slow, 3D chip stacking has emerged as a way to keep boosting overall chip performance, especially with modern, multi-tile processor designs.

Details on this node are limited, but it would seem that Samsung is making some changes to account/optimize for using SF4-fabbed chiplets in a 3D-stacked design, where chips need to be able to communicate both up and down. According to the company's Q1 financial report, Samsung expects to complete their preparatory work on the chip-stacking SF4 variant during the current quarter (Q2).

Sources: Samsung, Samsung

TSMC is no stranger to building big chips. Besides the ~800mm2 reticle limit of their normal logic processes, the company already produces even larger chips by fitting multiple dies on to a single silicon interposer, using their chip-on-wafer-on-substrate (CoWoS) technology. But even with current-gen CoWoS allowing for interposers up to 3.3x TSMC's reticle limit, TSMC plans to build bigger still in response to projected demand from the HPC and AI industries. To that end, as part of the company's North American Technology Symposium last week, TSMC announced that they are developing the means of building super-sized interposers that can reach over 8x the reticle limit.

TSMC's current-generation CoWoS technology allows for building interposers up to 2831 mm² and the company is already seeing customers come in with designs that run up to those limits. Both AMD's Instinct MI300X accelerator and NVIDIA's forthcoming B200 accelerator are prime examples of this, as they pack huge logic chiplets (3D stacked in case of AMD's product) and eight HBM3/HBM3E memory stacks in total. The total space afforded by the interposer gives these processors formidable performance, but chip developers want to go more powerful still. And to get there as quickly as possible, they'll need to go bigger as well in order to incorporate more logic chiplets and more memory stacks.

For their next-generation CoWoS product that's set to launch in 2026, TSMC plans to release CoWoS_L, which will offer a maximum interposer size of approximately 5.5 times that of a photomask, totaling 4719 mm² altogether. This next generation package will support up to 12 HBM memory stacks and will necessitate a larger substrate measuring at 100×100 mm. Coupled with process node improvements over the next few years, and TSMC expects chips based on this generation of CoWoS to offer better than 3.5x the compute performance of current-generation CoWoS chips.

Farther down the line, in 2027 TSMC intends introduce a version of CoWoS that allows for interposers up to 8 times larger than the reticle limit. This will offer an ample 6,864 mm² of space for chiplets on a substrate that measures 120×120 mm. TSMC envisions leveraging this technology for designs that integrate four stacked systems-on-integrated chips (SoICs), with 12 HBM4 memory stacks and extra I/O dies. TSMC roughly projects that this will enable chip designers to once again double performance, producing chips that surpass 7x the performance of current-generation chips.

Of course, building such large chips will come with its own set of consequences, above and beyond what TSMC will have to deal with. Enabling chip designers to build such grand processors is going to impact system design, as well as how datacenters accommodate these systems. TSMC's 100×100mm substrate will be riding right up to the limit of the OAM 2.0 form factor, whose modules measure 102×165mm to begin with. And if that generation of CoWoS doesn't break the current OAM form factor, then 120×120mm chips certainly will. And, of course, all of that extra silicon requires additional power and cooling, which is why we're already seeing hardware vendors prepare for how to cool multi-kilowatt chips by investigating liquid and immersion cooling.

Ultimately, even if Moore's Law has slowed to a crawl in terms of delivering transistor density improvements, CoWoS offers an out for producing chips with an ever-larger number of transistors. So with TSMC set to offer interposers and substrates with over twice the area of today's solutions, big chips intended for HPC systems are only going to continue to grow in both performance and size.

Related Reading

• TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
• TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells
• TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction
• TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips
• TSMC Jumps Into Silicon Photonics, Lays Out Roadmap For 12.8 Tbps COUPE On-Package Interconnect

Across the internet, from online forums such as Reddit to various other tech media outlets, there's a lot of furor around reports of Intel's top-end 14th and 13th Gen K series of processors running into stability issues. As Intel's flagship chips, these parts come aggressively clocked in order to maximize performance through various implementations of boost and turbo, leaving them running close to their limits out of the box. But with high-end motherboards further goosing these chips to wring even more performance out of them, it would seem that the Intel desktop ecosystem has finally reached a tipping point where all of these efforts to boost performance have pushed these flagship chips to unstable conditions. To that end, Intel has released new gudiance to its consumer motherboard partners, strongly encouraging them to actually implment Intel's stock power settings, and to use those baseline settings as their out-of-the-box default.

While the underlying conditions are nothing new – we've published stories time and time again about motherboard features such as multi-core enhancement (MCE) and raised power consumption limits that seek to maximize how hard and how long systems are able to turbo boost – the issue has finally come to a head in the last couple of months thanks to accumulating reports of system instability with Intel's 13900K and 14900K processors. These instability problems are eventually solved by either tamping down on these motherboard performance-boosting features – bringing the chips back down to something closer to Intel's official operating parameters – or downclocking the chips entirely.

Intel first began publicly investigating the matter on the 27th of February, when Intel's Communications Manager, Thomas Hannaford, posted a thread on Intel's Community Product Support Forms titled "Regarding Reports of 13th/14th Gen Unlocked Desktop Users Experiencing Stability Issues". In this thread, Thomas Hannaford said, "Intel is aware of reports regarding Intel Core 13th and 14th Gen unlocked desktop processors experiencing issues with certain workloads. We're engaged with our partners and are conducting analysis of the reported issues. If you are experiencing these issues, please reach out to Intel Customer Support for further assistance in the interim."

Since that post went up, additional reports have been circulating about instability issues across various online forums and message boards. The underlying culprit has been theorized to be motherboards implementing an array of strategies to improve chip performance, including aggressive multi-core enhancement settings, "unlimited" PL2 turbo, and reduced load line calibration settings. At no point do any of these settings overclock a CPU and push it to a higher clockspeed than it's validated for, but these settings do everything possible to keep a chip at the highest clockspeed possible at all times – and in the process seem to have gone a step too far.

From "Why Intel Processors Draw More Power Than Expected: TDP and Turbo Explained"

We wrote a piece initially covering multi-core enhancement in 2012, detailing how motherboard manufacturers try to stay competitive with each other and leverage any headroom within the silicon to output the highest performance levels. And more recently, we've talked about how desktop systems with Intel chips are now regularly exceeding their rated TDPs – sometimes by extreme amounts – as motherboard vendors continue to push them to run as hard as possible for the best performance.

But things have changed since 2012. At the time, this wasn't so much of an issue, as overclocking was actually very favorable to increasing the performance of processors. But in 2024 with chips such as the Intel Core i9-14900K, we have CPUs shipping with a maximum turbo clock speed of 6.0 GHz and a peak power consumption of over 400 Watts, figures that were only a pipe dream a decade ago.

Jumping to the present time, over the weekend Intel released a statement about the matter to its partners, outlining their investigation so far and their suggestions/requests to their partners. That statement was quickly leaked to the press, with Igorslab.de and others breaking the news. Since then, we've been able to confirm through official sources that this is a real and accurate statement from Intel.

This statement reads as follows:

One subtle undertone in this statement is that everything seems to revolve around motherboards, specifically their default settings. Looking to clarify matters, Intel has told me today that they aren't blaming motherboard vendors in the above statement to partners and OEMs. However, having had experience with multiple Z790 motherboards with Intel's Core i9-14900K, we know each vendor has a different idea of what the word 'default' means – and that none of them involve strictly sticking to Intel's own suggested values. These profiles within the firmware unlock power constraints to a very high level and go above and beyond what Intel recommends. One example is ICCMAX, which Intel recommends at 400A or below, whereas multiple Z790 motherboards will greatly exceed this value out of the box.

Impressing buyers and outperforming the competitors has become integral to every motherboard manufacturer's strategy, thanks to the highly competitive and commoditized nature of the motherboard market. As a result, the user experience is sometimes relegated to a low-priority goal. And while this focus on performance and overclocking features plays well in reviews and to overclockers and tinkerers looking to push their CPU to its very limit, as we are now seeing, it seems to have come at the cost of out-of-the-box stability, with overly-aggressive settings leading to systems being unstable even at default settings.

Especially concerning here is what all of this means for a CPU's VCore voltage, which is another aspect of system performance that motherboard vendors have complete control over. With the need to quickly modulate the VCore voltage to keep up with the load on the processor – to keep it high enough for stability, but not allow it to spike so high as to risk damage – it's a careful balancing act for motherboard vendors even when they're not trying to squeeze out every last bit of performance from a CPU. And when they are trying to squeeze out every last bit, then VCore is something to minimize in order to improve how long and hard a CPU can turbo, pushing a chip further towards potential instability.

Pivoting to some real-world data highlighting these potential issues, when we reviewed the Intel Core i9-14900K, Intel's flagship Raptor Lake Refresh (RPL-R) processor, we tested with the default settings on both of our Z790 motherboards. From the above data, we can see the MSI MEG Z790 Ace Max was drawing up to 415 W when using Linx to place a very heavy workload on the chip. We also ran the same chip and workload on ASRock's Z790 Taichi Carrara to provide additional data points, where we found that it's power consumption maxed out at 375 W, around 10% lower than the MSI board.

In both cases, this is much higher than Intel's official PL2 limit for the Intel Core i9-14900K, which says that the chip should top out at 253 W for moderate periods of load. But, as we've seen time and time again, the official TDP ratings from Intel do not mean much to high-end motherboards, which almost universally default to higher settings. Motherboard vendors want to be competitive, and as such, higher default power settings allow vendors to claim that they deliver better performance than their rivals.

As further evidence of this, check out some of our recent motherboard reviews. I have assembled a small list of links to those reviews, where we've seen excessive CPU voltage or power consumption (or more often, both) when using the default settings on each motherboard, in each of the below reviews we see much higher power levels than Intel's official TDP values, which over the last several years we've come to expect. Still, some can be too high, especially with an already close-to-the-limit Core i9-14900K.

• ASRock Z790 Taichi Carrara Motherboard Review: ASRock Rocks With White Marble
• MSI MEG Z690 Unify (DDR5) Motherboard Review: The All-Black Option
• ASUS ROG Maximus XII Hero Wi-Fi Review: The Tale of Two Motherboards

We have been communicating with Intel for most of the day to get official answers to what's happening. To that end, we have received an official statement from Intel, which reads as follows:

Intel's official statement to us, which is likely their standpoint for the general public, highlights a list of recommended BIOS and software settings, such as those found in Intel's Extreme Tuning Utility (XTU). There's no mention of specific motherboard vendors or models, but the above settings should alleviate crashing and instability issues by preventing motherboards from pushing CPUs too hard.

It remains to be seen just how motherboard vendors will opt to address the issue, as all of the motherboard vendors we contacted today didn't have anything official to say about the matter. With that said, however, a few motherboard vendors have recently released a wave of new BIOSes, adding a new profile called "Intel Baseline" or similar. In all cases, these new BIOSes seem to do exactly what it says on the label, configuring the system to run at Intel's actual, suggested stock settings, and thus ensuring the stability of system in exchange for reduced performance.

With that said, these new Intel baseline settings are still not being used as the default settings for high-end motherboards. So the out-of-the-box user experience is still for MCE and other features to be enabled, pushing these processors to their performance limit. Users who actually want baseline performance – and the guaranteed stability it comes with – will still need to go into the BIOS and explicitly select this profile.

Ultimately, given the spec-defying state of high-end motherboards over the last decade, this is a badly-needed improvement. But still, as Intel has yet to wrap up their root cause investigation and issue formal guidance to consumers, we're not quite to the end of this saga just yet. There are still some developments to come, as we expect to hear more in May.

While the all-in-one CPU cooler industry is dominated, at least in mindshare, by flagship coolers from the industry’s biggest brands, the market segment overall has grown over the years to cover a much larger gamut of users. From flagship coolers to sub-$100 specials, effective AIO coolers have become available and affordable for most mid-range and higher builds. Thanks in part to some intensive competition in this space, we’ve seen several vendors bring down even 360mm coolers to the sub-$100 market in an effort to get in an edge over their competitors, and a sale in the process.

Looking at an opportunity to grow their own customer base, even the normally premium-focused AlphaCool has opted to get into this action with their Core Ocean lineup of coolers. And today, we're taking a closer look at the Core Ocean T38 360mm, AlphaCool's latest entry-level AIO cooler.

At a high level, the Core Ocean T38 has been designed to balance performance with manufacturing costs, allowing the company to put together an effective cooler that can still be priced low enough to reach budget-conscious consumers. Sticking with an aluminum radiator and keeping the frills such as RGB lighting to a minimum, the T38 is primarily aimed at system builders who require straightforward, effective cooling solutions – and without the complexity of AlphaCool's renowned open-loop custom liquid cooling kits. As we'll see, nothing comes for free, but AlphaCool has been able to put together a rather effective CPU cooler for $100 that's hard to ignore.

Optical connectivity – and especially silicon photonics – is expected to become a crucial technology to enable connectivity for next-generation datacenters, particularly those designed HPC applications. With ever-increasing bandwidth requirements needed to keep up with (and keep scaling out) system performance, copper signaling alone won't be enough to keep up. To that end, several companies are developing silicon photonics solutions, including fab providers like TSMC, who this week outlined its 3D Optical Engine roadmap as part of its 2024 North American Technology Symposium, laying out its plan to bring up to 12.8 Tbps optical connectivity to TSMC-fabbed processors.

TSMC's Compact Universal Photonic Engine (COUPE) stacks an electronics integrated circuit on photonic integrated circuit (EIC-on-PIC) using the company's SoIC-X packaging technology. The foundry says that usage of its SoIC-X enables the lowest impedance at the die-to-die interface and therefore the highest energy efficiency. The EIC itself is produced at a 65nm-class process technology.

TSMC's 1st Generation 3D Optical Engine (or COUPE) will be integrated into an OSFP pluggable device running at 1.6 Tbps. That's a transfer rate well ahead of current copper Ethernet standards – which top out at 800 Gbps – underscoring the immediate bandwidth advantage of optical interconnects for heavily-networked compute clusters, never mind the expected power savings.

Looking further ahead, the 2nd Generation of COUPE is designed to integrate into CoWoS packaging as co-packaged optics with a switch, allowing optical interconnections to be brought to the motherboard level. This version COUPE will support data transfer rates of up to 6.40 Tbps with reduced latency compared to the first version.

TSMC's third iteration of COUPE – COUPE running on a CoWoS interposer – is projected to improve on things one step further, increasing transfer rates to 12.8 Tbps while bringing optical connectivity even closer to the processor itself. At present, COUPE-on-CoWoS is in the pathfinding stage of development and TSMC does not have a target date set.

Ultimately, unlike many of its industry peers, TSMC has not participated in the silicon photonics market up until now, leaving this to players like GlobalFoundries. But with its 3D Optical Engine Strategy, the company will enter this important market as it looks to make up for lost time.

Related Reading

• TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
• TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells
• TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction
• TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips

TSMC has been offering its System-on-Wafer integration technology, InFO-SoW, since 2020. For now, only Cerebras and Tesla have developed wafer scale processor designs using it, as while they have fantastic performance and power efficiency, wafer-scale processors are extremely complex to develop and produce. But TSMC believes that not only will wafer-scale designs ramp up in usage, but that megatrends like AI and HPC will call for even more complex solutions: vertically stacked system-on-wafer designs.

Tesla Dojo's wafer-scale processors — the first solutions based based on TSMC's InFO-SoW technology that are in mass production — have a number of benefits over typical system-in-packages (SiPs), including low-latency high-bandwidth core-to-core communications, very high performance and bandwidth density, relatively low power delivery network impendance, high performance efficiency, and redunancy.

But with InFO-SoW and other wafer scale integration methods, processor designers have to rely solely on on-chip memory. This is perfectly adequate for many applications, but it may not be enough for next-generation AI workloads. Furthermore, with InFO-SoW, the whole wafer has to be processed using one fabrication technology, which may not be optimal, or too expensive for certain designs.

So, with its next-generation system-on-wafer platform, TSMC plans to bring together two of its packaging technologies: InFO-SoW and System on Integrated Chips (SoIC), which will allow it to stack memory or logic on top of a system-on-wafer using its Chip-on-Wafer (CoW) method. The CoW-SoW technology, which the company announced at its North American Technology Symposium, will be ready for mass production in 2027.

For now, TSMC is mostly talking about wedding wafer scale processors with HBM4 memory. And given that HBM4 stacks will feature a 2048-bit interface, its tighter integration with logic is something that the industry is considering.

"So, in the future, using wafer level integrations [will allow] our customers to integrate even more logic and memory together," said Kevin Zhang, Vice President of Business Development at TSMC. "SoW is no longer a fiction, this is something we already work with our customers [on] to produce some of the products already in place. This we think by leveraging our advanced wafer level integration technology, we can provide our customer a very important the path allow them to continue to grow their capability to bring in more computation, more energy efficient computation, to their AI cluster or [supercomputer]."

Related Reading

• TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
• TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells
• TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction

While the bulk of attention on TSMC is aimed at its leading-edge nodes, such as N3E and N2, loads of chips will continue to be made using more mature and proven process technologies for years to come. Which is why TSMC has continued to refine its existing nodes, including its current-generation 5nm-class offerings. To that end, at its North American Technology Symposium 2024, the company introduced a new, optimized 5nm-class node: N4C.

TSMC's N4C process belongs to the company's 5nm-class family of fab nodes and is a superset of N4P, the most advanced technology in that family. In a bid to further bring down 5nm manufacturing costs, for TSMC is implementing several changes for N4C, including rearchitecting their standard cell and SRAM cell, changing some design rules, and reducing the number of masking layers. As a result of these improvements, the company expects N4C to achieve both smaller die sizes as well as a reduction in production complexity, which in turn will bring die costs down by up to 8.5%. Furthermore, with the same wafer-level defect density rate as N4P, N4C stands to offer even higher functional yields thanks to its die area reduction.

"So, we are not done with our 5nm and 4nm [technologies]," said Kevin Zhang, Vice President of Business Development at TSMC. "From N5 to N4, we have achieved 4% density improvement optical shrink, and we continue to enhance the transistor performance. Now we bring in N4C to our 4 nm technology portfolio. N4C allows our customers to reduce their costs by remove some of the masks and to also improve on the original IP design like a standard cell and SRAM to further reduce the overall product level cost of ownership."

TSMC says that N4C can use the same design infrastructure as N4P, though it is unclear whether N5 and N4P IP can be re-used for N4C-based chips. Meanwhile, TSMC indicates that it offers various options for chipmakers to find the right balance between cost benefits and design effort, so companies interested in adopting a 4nm-class process technologies could well adopt N4C.

The development of N4C comes as many of TSMC's chip design customers are preparing to launch chips based on the company's final generation of FinFET process technology, the 3nm N3 series. While N3 is expected to be a successful family, the high costs of N3B have been an issue, and the generation is marked by diminishing performance and transistor density returns altogether. Consequently, N4C could well become a major, long-lived node at TSMC, serving as a good fit for customers who want to stick to a more cost-effective FinFET node.

"This is a very significant enhancement, we are working with our customer, basically to extract more value from their 4 nm investment," Zhang said.

TSMC expects to start volume production of N4C chips some time next year. And with TSMC having produced 5nm-class for nearly half a decade at that point, N4C should be able to hit the ground running in terms of volume and yields.

Related Reading

• TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
• TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells
• TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips
• TSMC Jumps Into Silicon Photonics, Lays Out Roadmap For 12.8 Tbps COUPE On-Package Interconnect

Taiwan Semiconductor Manufacturing Co. provided several important updates about its upcoming process technologies at its North American Technology Symposium 2024. At a high level, TSMC's 2 nm plans remain largely unchanged: the company is on track to start volume production of chips on it's first-generation GAAFET N2 node in the second half of 2025, and N2P will succeed N2 in late 2026 – albeit without the previously-announced backside power delivery capabilities. Meanwhile, the whole N2 family will be adding TSMC's new NanoFlex capability, which allows chip designers to mix and match cells from different libraries to optimize performance, power, and area (PPA). 

One of the key announcements of the event is TSMC's NanoFlex technology, which will be a part of the company's complete N2 family of production nodes (2 nm-class, N2, N2P, N2X). NanoFlex will enable chip designers to mix and match cells from different libraries (high performance, low power, area efficient) within the same block design, allowing designers to fine tune their chip designs to improve performance or lower power consumption.

TSMC's contemporary N3 fabrication process already supports a similar capability called FinFlex, which also allows designers to use cells from different libraries. But since N2 relies on gate-all-around (GAAFET) nanosheet transistors, NanoFlex gives TSMC some additional controls: firstly, TSMC can optimize channel width for performance and power and then build short cells (for area and power efficiency) or tall cells (for up to 15% higher performance).  

When it comes to timing, TSMC's N2 is set to enter risk production in 2025 and high-volume manufacturing (HVM) in the second half of 2025, so it looks like we are going to see N2 chips in retail devices in 2026. Compared to N3E, TSMC expects N2 to increase performance by 10% to 15% at the same power, or reduce power consumption by 25% to 30% at the same frequency and complexity. As for chip density, the foundry is looking at a 15% density increase, which is a good degree of scaling by contemporary standards.

N2 will be followed by performance-enhanced N2P, as well as the voltage-enhanced N2X in 2026. Although TSMC once said that N2P would add backside power delivery network (BSPDN) in 2026, it looks like this will not be the case and N2P will use regular power delivery circuitry. The reason for this is unclear, but it looks like the company decided not to add a costly feature to N2P, but to reserve it to its next-generation node, which will also be available to customers in late 2026.

N2 is still expected to feature a major innovation related to power: super-high-performance metal-insulator-metal (SHPMIM) capacitors, which are are being added to improve power supply stability. The SHPMIM capacitor offers more than twice the capacity density of TSMC's existing super-high-density metal-insulator-metal (SHDMIM) capacitor. Additionally, the new SHPMIM capacitor cuts sheet resistance (Rs in Ohm/square) and via resistance (Rc) by 50% compared to its predecessor.

Related Reading

• TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
• TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction
• TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips
• TSMC Jumps Into Silicon Photonics, Lays Out Roadmap For 12.8 Tbps COUPE On-Package Interconnect

With the arrival of spring comes showers, flowers, and in the technology industry, TSMC's annual technology symposium series. With customers spread all around the world, the Taiwanese pure play foundry has adopted an interesting strategy for updating its customers on its fab plans, holding a series of symposiums from Silicon Valley to Shanghai. Kicking off the series every year – and giving us our first real look at TSMC's updated foundry plans for the coming years – is the Santa Clara stop, where yesterday the company has detailed several new technologies, ranging from more advanced lithography processes to massive, wafer-scale chip packing options.

Today we're publishing several stories based on TSMC's different offerings, starting with TSMC's marquee announcement: their A16 process node. Meanwhile, for the rest of our symposium stories, please be sure to check out the related reading below, and check back for additional stories.

• TSMC's 1.6nm Technology Announced for Late 2026: A16 with "Super Power Rail" Backside Power
• TSMC 2nm Update: N2 In 2025, N2P Loses Backside Power, and NanoFlex Brings Optimal Cells
• TSMC Preps Cheaper 4nm N4C Process For 2025, Aiming For 8.5% Cost Reduction
• TSMC's System-on-Wafer Platform Goes 3D: CoW-SoW Stacks Up the Chips
• TSMC Jumps Into Silicon Photonics, Lays Out Roadmap For 12.8 Tbps COUPE On-Package Interconnect
• TSMC Readies 8x Reticle Super Carrier Interposer For Next-Gen Chips Twice as Large As Today's

Headlining its Silicon Valley stop, TSMC announced its first 'angstrom-class' process technology: A16. Following a production schedule shift that has seen backside power delivery network technology (BSPDN) removed from TSMC's N2P node, the new 1.6nm-class production node will now be the first process to introduce BSPDN to TSMC's chipmaking repertoire. With the addition of backside power capabilities and other improvements, TSMC expects A16 to offer significantly improved performance and energy efficiency compared to TSMC's N2P fabrication process. It will be available to TSMC's clients starting H2 2026.

TSMC A16: Combining GAAFET With Backside Power Delivery

At a high level, TSMC's A16 process technology will rely on gate-all-around (GAAFET) nanosheet transistors and will feature a backside power rail, which will both improve power delivery and moderately increase transistor density. Compared to TSMC's N2P fabrication process, A16 is expected to offer a performance improvement of 8% to 10% at the same voltage and complexity, or a 15% to 20% reduction in power consumption at the same frequency and transistor count. TSMC is not listing detailed density parameters this far out, but the company says that chip density will increase by 1.07x to 1.10x – keeping in mind that transistor density heavily depends on the type and libraries of transistors used.

The key innovation of TSMC's A16 node, is its Super Power Rail (SPR) backside power delivery network, a first for TSMC. The contract chipmaker claims that A16's SPR is specifically tailored for high-performance computing products that feature both complex signal routes and dense power circuitry.

As noted earlier, with this week's announcement, A16 has now become the launch vehicle for backside power delivery at TSMC. The company was initially slated to offer BSPDN technology with N2P in 2026, but for reasons that aren't entirely clear, the tech has been punted from N2P and moved to A16. TSMC's official timing for N2P in 2023 was always a bit loose, so it's hard to say if this represents much of a practical delay for BSPDN at TSMC. But at the same time, it's important to underscore that A16 isn't just N2P renamed, but rather it will be a distinct technology from N2P.

TSMC is not the only fab pursuing backside power delivery, and accordingly, we're seeing multiple variations on the technique crop up at different fabs. The overall industry has three approaches for BSPDN: Imec's Buried Power Rail, Intel's PowerVia, and now TSMC's Super Power Rail.

The oldest technique, Imec's Buried Power Rail, essentially places power delivery network on the backside of the wafer and then connects power rail of logic cells to power contact using nano TSVs. This enables some area scaling and does not add too much complexity to production. The second implementation, Intel's PowerVia, connects power to the cell or transistor contact, which provides a better result, but at the cost of complexity.

Finally, we have TSMC's new Super Power Rail BSPDN technology, which connects a backside power network directly to each transistor's source and drain. According to TSMC, this is the most efficient technology in terms of area scaling, but the trade-off is that it's the most complex (and expensive) when it comes to production.

That TSMC has opted to go with the most complex version of BSPDN may be part of the reason that we've seen it removed from N2P, as implementing it will ultimately add to both time and costs. This leaves A16 as TSMC's premiere performance node for the 2026/2027 time-frame, while N2P can be positioned to offer a more balanced combination of performance and cost efficiency.

Angstrom Era Kicks Off In Late 2026 With New Node Naming Convention

Finally, as with Intel, we're also seeing TSMC adopt a new process node naming convention starting with this generation of technology. The name itself is largely arbitrary – and this has already been the case in the fab industry for several years now – but with current node names already in the single digits (e.g. N2), the industry has needed to re-calibrate node names to something smaller than the nanometer. And thus we've arrived at the 'angstrom era.' But regardless of what exactly it's called or why it's called that, the important point is that A16 will be the next generation node beyond TSMC's 2nm-class products.

TSMC expects to start volume production on A16 in H2 2026, so it is likely that the first products based on this technology will hit the market in 2027. Given the timing, the production node will presumably compete against Intel's 14A; though at 2+ years out and with no one producing BSPDN in volume today, there's still a lot of time for plans and roadmaps to change.

Seagate Technology has reportedly notified its customers abouts its plans to raise prices on new hard drive orders and for demands that exceed prior agreements, echoing a similar move by Western Digital, which increased its prices earlier this month. These changes come in response to a surge in demand for high-capacity HDDs and constraints in supply due to decreased production capabilities of both Seagate and Western Digital, reports TrendForce.

According to industry insights reported by TechNews, the sector anticipates that the scarcity of high-capacity HDD products will persist throughout the current quarter and possibly extend over the entire year. It is forecasted that HDD prices will rise by 5% to 10% in Q2 2024 alone and could increase further as a reault of the ongoing challenges faced by the storage industry.

The primary driver behind Seagate's decision is increased demand for high-capacity HDDs, which are used to train AI models. This demand spike, coupled with a reduction in production output from hard drive makers, has created a significant supply-demand imbalance. As a result, Seagate has decided to adjust their pricing strategy to manage the situation. Further exacerbating the issue are global inflationary pressures which continue to inflate costs across the board, which also contributed to the company's decision to increase prices, Seagate said in a message to clients published by TrendForce.

Seagate emphasized that its reduced production capacity has been a major challenge, hindering the company's ability to fulfill customer demands fully and promptly.

"As a result, we will be implementing price increases effective immediately on new orders and for demand that is over and above previously committed volumes," the alleged memo from Seagate reads. "Supply constraints are expected to continue and as such we anticipate that prices will continue to increase in the coming quarters."

Earlier this month Western Digital also informed its customers about price hikes for its HDD and SSD products. This notification was based on similar issues — higher than anticipated demand across the whole product range and additional supply chain challenges affecting the electronics sector. Western Digital's announcement made it clear that these disruptions are likely to continue, prompting further price adjustments.

Sources: TrendForce, TrendForce, TechNews

As Qualcomm prepares for the mid-year launch of their forthcoming Snapdragon X SoCs for PCs, and the eagerly anticipated Oryon CPU cores within, the company is finally shoring up their official product plans, and releasing some additional technical details in the process. Thus far the company has been demonstrating their Snapdragon X Elite SoC in its highest-performing, fully-enabled configuration. But the retail Snapdragon X Elite will not be a single part; instead, Qualcomm is preparing a whole range of chip configurations for various price/performance tiers in the market. Altogether, there will be 3 Snapdragon X Elite SKUs that differ in CPU and GPU performance.

As well, the company is introducing a second Snapdragon X tier, Snapdragon X Plus, for those SKUs positioned below the Elite performance tier. As of today, this will be a single configuration. But if the Snapdragon X lineup is successful and demand warrants it, I would not be surprised to see Qualcomm expand it further – as they have certainly left themselves the room for it in their product stack. In the meantime, with Qualcomm’s expected launch competition now shipping (Intel Core Ultra Meteor Lake and AMD Ryzen Mobile 8040 Hawk Point), the company is also very confident that even these reduced performance Snapdragon X Plus chips will be able to beat Intel and AMD in multithreaded performance – never mind the top-tier Snapdragon X Elite chips.

Qualcomm will be launching this expanded four chip stack at once; so both Snapdragon X Elite and Snapdragon X Plus tier devices should be available at the same time. The company’s goal is still to have devices on the shelf “mid-year”, although the company isn’t providing any more precise guidance than that. With Qualcomm’s CEO, Cristiano Amon, set to deliver a Computex keynote in June, I expect we’ll get more specific details on timings then, along with the company and its partners using the event to announce and showcase some retail laptop designs. So this is very much looking like a summer launch at the moment.

In the meantime, Qualcomm is already showing off what their Snapdragon X Plus chips can do with a fresh set of live benchmarks, akin to their Snapdragon X Elite performance previews from October 2023. We’ll dive into those in a bit, but suffice it to say, Qualcomm knows the score, and they want to make sure the entire world knows when they’re winning.

As Seagate ramps up shipments of its new heat assisted magnetic recording (HAMR)-based Mozaic 3+ hard drive platform, the company is both in the enviable position of shipping the first major new hard drive technology in a decade, and the much less enviable position of proving the reliability of the first major new hard drive technology in a decade. Due to HAMR's use of temporal heating with its platters, as well as all-new read/write heads, HAMR introduces multiple new changes at once that have raise questions about how reliable the technology will be. Looking to address these matters (and further promote their HAMR drives), Seagate has published a fresh blog post outlining the company's R&D efforts, and why the company expects their HAMR drives to last several years – as long or longer than current PMR hard drives.

According to the company, the reliability of Mozaic 3+ drives on par with traditional drives relying on perpendicular magnetic recording (PMR), the company says. In fact, components of HAMR HDDs have demonstrated a 50% increase in reliability over the past two years. Seagate says that Mozaic 3+ drives boast impressive durability metrics: their read/write heads have demonstrated capacity to handle over 3.2 petabytes of data transfer over 6,000 hours of operation, which exceeds data transfers of typical nearline hard drives by 20 times. Accordingly, Seagate is rating these drives for a mean time between failure (MTBF) 2.5 million hours, which is in-line with PMR-based drives.

Based on their field stress tests, involving over 500,000 Mozaic 3+ drives, Seagate says that the heads of Mozaic 3+ drives will last over seven years, surpassing the typical lifespan of current PMR-based drives. Generally, customers anticipate that modern PMR drives will last between four and five years with average usage, so these drives would exceed current expectations.

Altogether, Seagate is continuing aim for a seamless transition from PMR to HAMR drives in customer systems. That means ensuring that these new drives can fit into existing data center infrastructures without requiring any changes to enterprise specifications, warranty conditions, or form factors.

Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 GT/s. The new 3D TLC NAND memory will initially be used to build high-capacity and high-performance SSDs, which will help to solidify Samsung's position in the storage market.

Diving right in, Samsung is conspicuously avoiding to list the number of layers in their latest generation NAND, which is the principle driving factor in increasing capacity generation-on-generation. The company's current 8th gen V-NAND is 236 layers – similar to its major competitors – and word on the street is that 9th gen V-NAND ups that to 290 layers, though this remains to be confirmed.

Regardless, Samsung says that its 9th generation V-NAND memory boasts an approximate 50% improvement in bit density over its 8th generation predecessor. Driving this gains, the company cites the miniaturization of the cell size, as well as the integration of enhanced memory cell technologies that reduce interference and extend the lifespan of the cells. With their latest NAND technology, Samsung has also been able to eliminate dummy channel holes, thus reducing the planar area of the memory cells.

Interestingly, today's announcement also marks the first time that Samsung has publicly confirmed their use of string stacking in their NAND, referring to it as their "double-stack structure." The company is widely believed to have been using sting stacking back in their 8th generation NAND as well, however this was never confirmed by the company. Regardless, the use of string stacking is only going to increase from here, as vendors look to keep adding layers to their NAND dies, while manufacturing variability and channel hole tolerances make it difficult to produce more than 150-200 layers in a single stack.

Samsung TLC V- NAND Flash Memory
	9th Gen V-NAND	8th Gen V-NAND
Layers	290?	236
Decks	2 (x145)	2 (x118)
Die Capacity	1 Tbit	1 Tbit
Die Size (mm2)	?mm2	?mm2
Density (Gbit/mm2)	?	?
I/O Speed	3.2 GT/s (Toggle 5.1)	2.4 GT/s (Toggle 5.0)
Planes	6?	4
CuA / PuC	Yes	Yes

Speaking of channel holes, another key technological enhancement in the 9th gen V-NAND is Samsung's advanced 'channel hole etching' technology. This process improves manufacturing productivity by enabling the simultaneous creation of electron pathways within a double-stack structure. This method is crucial as it enables efficient drilling through more layers, which is increasingly important as cell layers are added.

The latest V-NAND also features the introduction of a faster NAND flash interface, Toggle DDR 5.1, which boosts peak data transfer rates by 33% to 3.2 GT/s, or almost 400MB/sec for a single die. Additionally, 9th gen V-NAND's power consumption has been reduced by 10%, according to Samsung. Though Samsung doesn't state under what conditions – presumably, this is at iso-frequency rather than max frequency.

Samsung's launch of 1Tb TLC V-NAND is set to be followed by the release of a quad-level cell (QLC) model later this year.

"We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future applications leaps forward," said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. "In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product. Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation."

Lexar has a long history of serving the flash-based consumer storage market in the form of SSDs, memory cards, and USB flash drives. After having started out as a Micron brand, the company was acquired by Longsys which has diversified its product lineup with regular introduction of new products. Recently, the company announced a number of portable SSDs targeting different market segments. The Lexar SL500 Portable SSD is one of the moderately priced 20 Gbps PSSDs in that set.

The SL500 is able to achieve its price point thanks to the use of a native USB flash controller - the Silicon Motion SM2320. The unique aspect is the use of YMTC 3D TLC NAND (compared to the usual Micron or BiCS NAND that we have seen in previous SM2320-based PSSDs). Read on for a detailed look at the SL500, including an analysis of its internals and evaluation of its performance consistency, power consumption, and thermal profile.

While desktop PC power supplies receive the bulk of enthusiasts’ attention for good reasons – not the least of which being the vast selection of options that comes from being a standardized part – power supplies as a whole aren’t just a concern for big PCs. With the majority of PC sales having flipped to notebook sales some years ago, notebook power supplies already lead the market in volume. And while most laptops don’t need the kind of massively powered PSUs that dominate the desktop space, even that is slowly changing as desktop replacement-class laptops increasingly grow in performance and power consumption.

Perhaps the poster-child for the high-performance, high-powered laptop is Eurocom, who has a long history of developing heavy-duty DTR laptops that are all but portable desktop systems. Following recent trends in GPU power consumption and in GPU popularity for both gaming and AI workloads, the company has been selling a range of “mobile supercomputers”, which are practically large, tailor-made laptops that rival even the best of desktop computers – and have the power requirements to match.

In order to power their own high-end laptops, Eurocom has developed a rather unusual 780W AC adapter for high-performance laptops. Intended to power the most powerful of powerful laptops, their latest power adapter can supply over three-quarters of a kilowatt of DC power; a desktop-like wattage for a desktop-like device. It’s a laptop power adapter that’s unique in its scale, and with some room to scale up even further.

Eurocom 780W AC Adapter Power specifications
RAIL	+20V
MAX OUTPUT	39A
	780W
DIMENSIONS	325 x 110 x 40mm, 1.38kg
AC INPUT	90 - 264 VAC, 50 - 60 Hz
MSRP	PSU: $299, Cable: $129+

Eurocom has offered this adapter for a few years now. But it’s taken on a new life as more laptops have been released that use such a large adapter (or two smaller 300W-ish power adapters). And, critically, Eurocom has made additional DC cable/connector sets for other manufactuers’ laptops, significantly increasing the number of systems it’s compatible with. Currently, Eurocom offers DC cables for the following laptops:

• Alienware M17x M18x; 1x DC Cable ; w/ barrel AW connector; 193cm/6.4ft 
• Alienware AREA 51m; 1x DC Cable + Splitter Box w/ 2x barrel AW connectors; 152cm/5ft 
• ASUS ROG G18 Strix; GX501V; GM501; GM501GM; GX531GM; 1x DC Cable; w/ barrel ROG connector 
• ASUS G703GX, GZ700GX; 1x DC Cable w/ 2x ROG barrel connectors; 152cm/5ft 
• CLEVO, OriginPC, Sager, XMG, EUROCOM laptops; 1x DC Cable; w/ 4-pin round connector; 182cm / 6ft 
• CLEVO X370SNx; 1x DC Cable; w/ square connector; 120cm / 3.8ft 
• CLEVO X170SM/X170KM; 1x DC Cable; w/ dual square connectors; 152cm / 5ft 
• Dell Precision 7720/7710; 1x DC Cable; w/ barrel Dell connector; 120cm / 3.8ft 
• MSI GE76, GT76, GT77, GE78HX Raider, Titan 18HX 1x DC Cable; w/ single square connector; 120cm / 3.8ft 
• MSI laptops & MSI Trident AS Gaming Desktops; 1x DC Cable; w/ 4-pin round connector; 182cm / 6ft 

The Eurocom 780W AC Adapter

Externally, the Eurocom 780W AC adapter looks like a hybrid between a PC PSU and a laptop adapter. It is shaped like an oversized laptop AC adapter but has a metallic body and cooling vents/fans. Eurocom advertises that it weighs “only 1.34kg”, which is the weight of an entire 14-inch laptop by comparison, but is relatively lightweight for a PSU with that kind of power output. The company logo is debossed across the top side of the adapter, with four round anti-slip pads found at its bottom. Care needs to be taken while moving it around because the metallic edges and weight can spell trouble for wooden surfaces.

Eurocom installed a small information display on the AC adapter, which shows the current, voltage, and power output, as well as the temperature of the adapter. It is not perfectly accurate – we can see it was reading a 12W load without a DC cable attached to the adapter – but it works as a basic reference. Next to it, there is a heavy-duty metallic connector for the DC cable. On the other side we can find a typical three-prong C14 AC cable receptacle, as well as an on/off switch, which is not something commonly found on laptop AC adapters.

 

Opening up the chassis, we can see that the Eurocom 780W AC adapter is not unlike common PC PSUs – just less complex due to the need to only generate a single 20V rail. The basic layout is identical, with an AC filter at the input consisting of four Y capacitors, two X capacitors, and two substantial filtering inductors, that leads to a rectifying bridge. The GBJ1508 bridge is made by HY Electronic Cayman Ltd, a Taiwanese company we're encountering for the first time.

 

Then we have an APFC circuitry with a massive Aishi 450V/560μF capacitor and a large filtering coil being its passive components, with a Toshiba K31N60W regulator on the same heatsink as the two MOSFETs that form a typical half-bridge configuration. Following that we have a small transformer and two Infineon 045N10N MOSFETs to generate the 20V power output. Cooling is provided by two Protechnic Electric MGT3812XB-W20 38 mm fans, which are small but high quality products with a double-ball bearing engine.

Test Results (~25°C Ambient)

For the testing of PSUs, we are using high precision electronic loads with a maximum power draw of 2700 Watts, a Rigol DS5042M 40 MHz oscilloscope, an Extech 380803 power analyzer, two high precision UNI-T UT-325 digital thermometers, an Extech HD600 SPL meter, and various other bits and parts. 

The average efficiency of the Eurocom 780W AC adapter is very high, at 91.6% when the PSU is powered from an 230V AC source and drops down to 90.9% when powered from an 115V AC source. There is no 80Plus or similar efficiency certification covering this PSU, but there is legislation such as the Ecodesign 2019/1782 directive, and, even though the manufacturer does not fully publish its performance specs as the directive requires, the Eurocom 780W adapter seems to easily meet them. We must mention that this kind of PSU has an advantage over classic PC PSUs because it only generates a single voltage line, and conversion losses are lower, so it should not be directly compared to any multi-voltage output PSU.

The two small fans of the Eurocom 780W AC adapter seem hardwired to the power output of the unit, largely ignoring the temperature of the adapter and adjusting their speed only according to the load. Up to 40% load, which should cover the power needs of most gaming laptops anyway, the adapter is practically entirely silent. The speed of the fan gradually increases when the load is greater than 330 Watts, reaching terrifying noise figures at maximum load. Given the nature of the adapter, it is highly unlikely that it will operate at such high a load for prolonged periods of time, as even the laptops that require 2x330 Watt adapters will not continuously sustain such a high load.

Power Supply Quality 

The electrical performance of the Eurocom 780W AC adapter is surprisingly good compared to its datasheet specifications. Eurocom claims a maximum voltage ripple of 200 mV but we recorded a maximum of 116 mV, which is alright for a 20 V rail and better than we expected due to the mediocre secondary side filtering. Voltage regulation is very good, at just 1.2% across the nominal load range.

Main Output
Load (Watts)	158.03		394.68		586.46		780.78
Load (Percent)	20% Load		50% Load		75% Load		100% Load
	Amperes	Volts	Amperes	Volts	Amperes	Volts	Amperes	Volts
20 V	7.8	20.26	19.5	20.24	29.25	20.05	39	20.02

 

Line	Regulation (20% to 100% load)	Voltage Ripple (mV)
		20% Load	50% Load	75% Load	100% Load
20V	1.2%	44	66	82	116

During our routine evaluation, we examine the fundamental protection features of all power supply units we review, including Over Current Protection (OCP), Over Voltage Protection (OVP), Over Power Protection (OPP), and Short Circuit Protection (SCP). The Eurocom 780W AC adapter behaves quite oddly here, as it has a rated output of 39 A and a maximum output of 45 A for 25 ms. However, we were able to draw 50 A from the unit, which is nearly 1000 Watts, for several minutes without triggering the OCP/OPP protection. The PSU did not show any serious signs of stress or overheating over that time, nor poor electrical performance. The OPP protection triggers immediately once the load is greater than 50.3 A – and also immediately resets and restarts the PSU when the load drops below 50.2A. It would seem that this platform was initially designed to be significantly more powerful and the OEM “forgot” to adjust the OCP/OPP trigger points.

Conclusion

The Eurocom 780W AC adapter melds raw power with innovation, presenting a piece that's as formidable as it is intriguing. With its substantial weight and metallic edges, it demands respect and caution, especially on delicate surfaces. However, its weight is justified by the impressive power output it delivers, making it a powerhouse that somewhat overshadows its bulky, heavy-set design. The inclusion of a display for monitoring performance is a smart touch, though its accuracy leaves room for improvement.

On the inside, Eurocom doesn't skimp on quality. The adapter's internals are a testament to careful selection and engineering, closely mirroring the complexity and efficiency of high-end PC PSUs. Its cooling system, though compact, functions well and provides good performance without compromising on noise levels — at least under most loads. That said, the adapter's noise profile at maximum load might not be everyone's cup of tea, hinting at a balance yet to be perfected between power and tranquility.

Overall, Eurocom's 780W AC adapter boasts commendable efficiency and electrical performance. But as a premium-priced product – a complete unit and cable will set you back at least $429 – it could benefit from a touch more finesse, particularly in terms of user safety and operational noise at high loads. Otherwise, I'm personally a bit surprised that Eurocom isn't offering a open-ended cable for DIY enthusiasts, which could broaden its appeal and utility. Such an addition would not only cater to a wider audience but also underscore Eurocom's commitment to versatility and innovation.

In sum, while the adapter stands out for its power and performance, there's also a clear avenue for Eurocom to enhance its appeal through minor, yet impactful, improvements.

When JEDEC released its DDR5 specification (JESD79) back in 2020, the standard setting organization defined precise specs for modules with speed bins of up to 6400 MT/s, while leaving the spec open to further expansions with faster memory as technology progressed. Now, a bit more than three-and-a-half years later, and the standards body and its members are gearing up to release a faster generation of DDR5 memory, which is being laid out in the newly updated JESD79-JC5 specification. The latest iteration of the DDR5 spec defines official DDR timing specifications up to 8800 MT/s, as well as adding some new features when it comes to security.

Diving in, the new specification outlines settings for memory chips (on all types of memory modules) with data transfer rates up to 8800 MT/s (AKA DDR5-8800). This suggests that all members of the JESD79 committee that sets the specs for DDR5 — including memory chip makers and memory controller designers — agree that DDR5-8800 is a viable extension of the DDR5 specification both from performance and cost point of view. Meanwhile, the addition of higher speed bins is perhaps enabled by another JEDEC feature introduced in this latest specification, which is the Self-Refresh Exit Clock Sync for I/O training optimization.

JEDEC DDR5-A Specifications
AnandTech		Data Rate MT/s	CAS Latency (cycles)			Absolute Latency (ns)	Peak BW GB/s
DDR5-3200	A	3200	22	22	22	13.75	25.6
DDR5-3600	A	3600	26	26	26	14.44	28.8
DDR5-4000	A	4000	28	28	28	14	32
DDR5-4400	A	4400	32	32	32	14.55	35.2
DDR5-4800	A	4800	34	34	34	14.17	38.4
DDR5-5200	A	5200	38	38	38	14.62	41.6
DDR5-5600	A	5600	40	40	40	14.29	44.8
DDR5-6000	A	6000	42	42	42	14	48
DDR5-6400	A	6400	46	46	46	14.38	51.2
DDR5-6800	A	6800	48	48	48	14.12	54.4
DDR5-7200	A	7200	52	52	52	14.44	57.6
DDR5-7600	A	7600	54	54	54	14.21	60.8
DDR5-8000	A	8000	56	56	56	14	64.0
DDR5-8400	A	8400	60	60	60	14.29	67.2
DDR5-8800	A	8800	62	62	62	14.09	70.4

When it comes to the JEDEC standard for DDR5-8800, it sets relatively loose timings of CL62 62-62 for A-grade devices and CL78 77-77 for lower-end C-grade ICs. Unfortunately, the laws of physics driving DRAM cells have not improved much over the last couple of years (or decades, for that matter), so memory chips still must operate with similar absolute latencies, driving up the relative CAS latency. In this case 14ns remains the gold standard, with CAS latencies at the new speeds being set to hold absolute latencies around that mark. But in exchange for systems willing to wait a bit longer (in terms of cycles) for a result, the new spec improves the standard's peak memory bandwidth by 37.5%.

This of course is just the timings set in the JEDEC specification, which is primarily of concern for server vendors. So we'll have to see just how much harder consumer memory manufacturers can push things for their XMP/EXPO-profiled memory. Extreme overclockers are already hitting speeds as high as 11,240 MT/s with current-generation DRAM chips and CPUs, so there may be some more headroom to play with in the next generation.

Meanwhile, on the security front, the updated spec makes a couple of changes that have been put in place seemingly to address rowhammer-style exploits. The big item here is Per-Row Activation Counting (PRAC), which true to its name, enables DDR5 to keep a count of how often a row has been activated. Using this information, memory controllers can then determine if a memory row has been excessively activated and is at risk of causing a neighboring row's bits to flip, at which point they can back off to let the neighboring row properly refresh and the data re-stabilize.

Notably here, the JEDEC press release doesn't use the rowhammer name at any point (unfortunately, we haven't been able to see the specification itself). But based on the description alone, this is clearly intended to thwart rowhammer attacks, since these normally operate by forcing a bit flip between refreshes through a large number of activations.

Digging a bit deeper, PRAC seems to be based on a recent Intel patent, Perfect Row Hammer Tracking with Multiple Count Increments (US20220121398A1), which describes a very similar mechanism under the name "Perfect row hammer tracking" (PRHT). Notably, the Intel paper calls out that this technique has a performance cost associated with it because it increases the overall row cycle time. Ultimately, as the vulnerability underpinning rowhammer is a matter of physics (cell density) rather than logic, it's not too surprising to see that any mitigation of it comes with a cost.

The updated DDR5 specification also deprecates support for Partial Array Self Refresh (PASR) within the standard, citing security concerns. PASR is primarily aimed at power efficiency for mobile memory to begin with, and as a refresh-related technology, presumably overlaps some with rowhammer – be it a means to attack memory, or an obstruction to defending against rowhammer. Either way, with mobile devices increasingly moving to low-power optimized LPDDR technologies anyhow, the depreciation of PASR does not immediately look like a major concern for consumer devices.

SK hynix and TSMC announced early on Friday that they had signed a memorandum of understanding to collaborate on developing the next-generation HBM4 memory and advanced packaging technology. The initiative is designed to speed up the adoption of HBM4 memory and solidify SK hynix's and TSMC's leading positions in high-bandwidth memory and advanced processor applications.

The primary focus of SK hynix's and TSMC's initial efforts will be to enhance the performance of the HBM4 stack's base die, which (if we put it very simply) acts like an ultra-wide interface between memory devices and host processors. With HBM4, SK hynix plans to use one of TSMC's advanced logic process technologies to build base dies to pack additional features and I/O pins within the confines of existing spatial constraints. 

This collaborative approach also enables SK hynix to customize HBM solutions to satisfy diverse customer performance and energy efficiency requirements. SK hynix has been touting custom HBM solutions for a while, and teaming up with TSMC will undoubtedly help with this.

"TSMC and SK hynix have already established a strong partnership over the years. We've worked together in integrating the most advanced logic and state-of-the art HBM in providing the world's leading AI solutions," said Dr. Kevin Zhang, Senior Vice President of TSMC's Business Development and Overseas Operations Office, and Deputy Co-Chief Operating Officer. "Looking ahead to the next-generation HBM4, we're confident that we will continue to work closely in delivering the best-integrated solutions to unlock new AI innovations for our common customers."

Furthermore, the collaboration extends to optimizing the integration of SK hynix's HBM with TSMC's CoWoS advanced packaging technology. CoWoS is among the most popular specialized 2.5D packaging process technologies for integrating logic chips and stacked HBM into a unified module.

For now, it is expected that HBM4 memory will be integrated with logic processors using direct bonding. However, some of TSMC's customers might prefer to use an ultra-advanced version of CoWoS to integrate HBM4 with their processors.

"We expect a strong partnership with TSMC to help accelerate our efforts for open collaboration with our customers and develop the industry's best-performing HBM4," said Justin Kim, President and the Head of AI Infra at SK hynix. "With this cooperation in place, we will strengthen our market leadership as the total AI memory provider further by beefing up competitiveness in the space of the custom memory platform."

AMD is looking to drive the AI PC market with options across multiple product lines, which aren't limited to consumer processors. While primarily designed for the commercial sector, AMD has announced the Ryzen Pro 8000 'Phoenix' series of APUs for desktops, which AMD claims is the first professional-grade CPU to include an NPU designed to provide on-chip AI neural processing capabilities. AMD has also announced the Ryzen Pro 8040 'Hawk Point' series of mobile processors designed for commercial laptops and notebooks.

AMD's Ryzen Pro 8000 and Ryzen Pro 8040 series processors come with support from AMD's Pro Manageability and AMD Pro Business Ready suites and are built with AMD's current generation Zen 4 cores. The Ryzen Pro 8000 and Ryzen Pro 8040 series processors are similar to their consumer-level counterparts. However, they have additional security features such as AMD Memory Guard, AMD Secure Processor, and Microsoft Pluton.

Touching on the differentiating factors between the non-Pro-consumer chips and the Ryzen Pro series, there is plenty for the commercial and enterprise market regarding security. In what is a first, the Ryzen Pro 8000 series is the first desktop platform to integrate Microsoft Pluton security features designed to protect when connecting to the cloud. Other features include AMD Memory Guard, which encrypts login credentials, keys, and text files stored in the DRAM. AMD Pro Security ties the AMD Zen 4 shadow stack and other layers in directly with the software stack, which, in this case, is Microsoft Windows 11 OS security. 

Another notable feature that AMD is hammering home is the on-chip AI capabilities of the included Ryzen AI neural processor unit (NPU), which allows enterprises to run AI workloads locally to mitigate privacy concerns by transferring data to and from the cloud. Although the current generation of NPUs embedded into processors are limited in what they can do, Ryzen AI is a driving factor within the AI PC, as manufacturers and SDVs are looking to utilize AI-accelerated features built into software, such as Microsoft with their AI-powered Copilot tool.

Although there are requirements that now must be met to ensure a PC is considered an 'AI PC,' Microsoft announced that their AI PC requirement is 45 TOPS of performance from the NPU alone, which none of the current generation of chips from AMD and Intel currently meet. In the desktop space, AMD currently has the lead as Intel has presently no offerings with an NPU, although, in the mobile space, AMD with their Ryzen 8040 (Hawk Point) and Intel with their Meteor Lake processors provide plenty of choice for users.

AMD Ryzen Pro 8000 Series (Zen 4)
AnandTech	Cores Threads	Base Freq	Boost Freq	L3 Cache	iGPU	TDP
Ryzen 7 Pro 8700G	8C / 16T	4200	5100	16 MB	R780M (12 CUs)	45-65 W
Ryzen 7 Pro 8700GE	8C / 16T	3650	5100	16 MB	R780M (12 CUs)	35 W
Ryzen 5 Pro 8600G	6C / 12T	4350	5000	16 MB	R760M (8 CUs)	45-65 W
Ryzen 5 Pro 8500G	6C / 12T	3550	5000	16 MB	R740M (4 CUs)	45-65 W
Ryzen 5 Pro 8600GE	6C / 12T	3900	5000	16 MB	R760M (8 CUs)	35 W
Ryzen 5 Pro 8500GE	6C / 12T	3400	5000	16 MB	R740M (4 CUs)	35 W
Ryzen 3 Pro 8300G	4C / 8T	3450	4900	8 MB	R740M (4 CUs)	45-65 W
Ryzen 3 Pro 8300GE	4C / 8T	3500	4900	8 MB	R740M (4 CUs)	35 W

Looking at the AMD Ryzen Pro 8000 series, AMD has announced eight new processors that include the same specifications as the non-Pro Ryzen 8000G APU counterparts. Two primary types of Ryzen Pro 8000 processors are set to be available: four with a configurable TDP of between 45 and 65 W and four with a flat TDP of 35 W for lower-powered environments. Leading the line-up is the Ryzen 7 Pro 8700G, which is identical in core specifications to the Ryzen 7 8700G APU, and has an 8C/16T (Zen 4) configuration with a base frequency of 4.2 GHz and a boost frequency of up to 5.1 GHz.

Even the Ryzen 7 Pro 8700GE, which is the 35 W version, has a 5.1 GHz boost frequency, although it has a slower base clock of 3.65 GHz. Both models have 16 MB of L3 cache, including AMD's integrated Radeon 780M (12 CUs) mobile graphics. All of the eight Ryzen Pro 8000 series models range from 4C/8T offerings with 8 MB of L3 cache and 4.9 GHz boost clocks, 6C/12T models with 5.0 GHz boost clocks and 16 MB of L3 cache, and those as mentioned above 8700/8700GE with 8C/16T.

While we take all performance figures given by manufacturers and vendors with a pinch of salt, AMD claims their Ryzen Pro 8000 series offers up to 19% better performance than Intel's 14th-gen Core series processors. AMD's match-up is the Ryzen 7 Pro 8700G vs. the Intel Core i7-14700, with AMD claiming a 47% victory in the Passmark 11 benchmark and 3X the graphics performance in 3D Mark Time Spy. This isn't entirely surprising because the Ryzen 7 Pro 8700G benefits from integrated RDNA3 graphics and AMD's Zen 4 cores.

AMD Ryzen Pro 8040 Series (Zen 4)
AnandTech	Cores Threads	Base Freq	Boost Freq	L3 Cache	iGPU	TDP
Ryzen 9 Pro 8945HS	8C / 16T	4000	5200	16 MB	12	35-54 W
Ryzen 7 Pro 8845HS	8C / 16T	3800	5100	16 MB	12	35-54 W
Ryzen 7 Pro 8840HS	8C / 16T	3300	5100	16 MB	12	20-28 W
Ryzen 5 Pro 8645HS	6C / 12T	4300	5000	16 MB	8	35-54 W
Ryzen 5 Pro 8640HS	6C / 12T	3500	4900	16 MB	8	20-28 W
Ryzen 7 Pro 8840U	8C / 16T	3300	5100	16 MB	12	15-28 W
Ryzen 5 Pro 8640U	6C / 12T	3500	4900	16 MB	8	15-28 W
Ryzen 5 Pro 8540U*	6C / 12T	3200	4900	16 MB	4	15-28 W
*Ryzen 5 Pro 8540U is the only chip without AMD's Ryzen AI NPU

Moving onto AMD's latest Ryzen Pro 8040 processors for the mobile market, AMD has refreshed their Hawk Point family for the enterprise market. AMD has eight new processors, which are segmented into two families, the HS series and the U series. The HS series has five new chips, which range from 6C/12T up to 8C/16T, all with varying levels of clock speed and TDPs. At the top of the line-up is the Ryzen 9 Pro 8945HS, which is a direct replacement for the Ryzen 9 Pro 7940HS, and as such, it comes with the same 4.0 GHz base clock and 5.2 GHz boost clocks.

Pivitong to TDP, AMD offers the Ryzen 9 Pro 8945HS, Ryzen 7 Pro 8845HS, and Ryzen 5 Pro 8645HS with a configurable TDP of between 35 and 54 W. In contrast, the Ryzen 7 Pro 8840HS and the Ryzen 5 Pro 8640HS are designed for lower-powered laptops with a cTDP of 20-28 W. Regarding cache, all of the announced Ryzen Pro 8040 series models come with 16 MB of L3 Cache. At the same time, specifications such as the integrated graphics and clock speeds all correspond to the consumer line-up, the Ryzen 8040 series.

AMD's in-house performance figures show the Ryzen 7 Pro 8840U at 15 W performing better than Intel's Core Ultra 7 165H at 28 W. Still, as we always do with performance figures provided by vendors, take these with a pinch of salt. AMD claims a 30% combined increase in performance across the board in workloads, including Geekbench v6, Blender, PCMark 10, PCMark Night Raid, and UL Procyon. While there are plenty of different areas where performance gains and losses can be achieved, AMD does claim that their Ryzen 9 Pro 8945HS at 45 W vs. the Intel Core Ultra 9 185H at 45 W is 50% better in Topaz Labs Video AI Gaia 4X software; they did both use discrete graphics in this test according to AMD's slide deck.

The other notable thing is that all of the Ryzen Pro 8040 series processors, except the bottom SKU, the Ryzen 5 Pro 8540U, come with AMD's Ryzen AI NPU integrated into the silicon. While the AI PC ecosystem is still growing, AMD and over 150+ ISVs look to continue the trend that AI will power more software features in the future than we've seen so far. We are still in the infancy stage of the ecosystem despite much of the marketing targeting the AI functionality, but as we see higher-performing NPUs coming in the next generation of chips, at least ones that can match Microsoft 45 NPU TOPS requirement to run Copilot locally, much of the benefit of the NPU is currently down to how much power can be saved.

The introduction of the Ryzen Pro 8000/8040 series completes AMD's commercial client platform, along with the readily available Ryzen Threadripper Pro 7000-WX series for commercial and professional workstations. What sets these AMD Ryzen Pro series processors apart from the consumer (non-Pro) variants is support for the AMD Pro Manageability toolkit, which includes features such as cloud-based remote manageability to enable off-site IT technicians the ability to access devices remotely, as well WPA3 SAE encryption, which provides client-to-cloud protection for enterprises over shared networks.

AMD has not announced when the Ryzen Pro 8000 series APUs or the Ryzen Pro 8040 mobile chips will be available for purchase. However, we expect a wide array of OEMs, such as HP and Lenovo, to be already in the process of readying solutions that should hit the market soon.

Taiwan Semiconductor Manufacturing Co. this week released its financial results for Q1 2024. Due to a rebound in demand for semiconductors, the company garned $18.87 billion in revenue for the quarter, which is up 12.9% year-over-year, but a decline of 3.8% quarter-over-quarter. The company says that in increase in demand for HPC processors (which includes processors for AI, PCs, and servers) drove its revenue rebound in Q1, but surprisingly, revenue share of TSMC's flagship N3 (3nm-class) process technology declined steeply quarter-over-quarter.

"Our business in the first quarter was impacted by smartphone seasonality, partially offset by continued HPC-related demand," said Wendell Huang, senior VP and chief financial officer of TSMC. "Moving into second quarter 2024, we expect our business to be supported by strong demand for our industry-leading 3nm and 5nm technologies, partially offset by continued smartphone seasonality."

In the first quarter of 2024, N3 wafer sales accounted for 9% of the foundry's revenue, down from 15% in Q4 2023, and up from 6% in Q3 2023. In terms of dollars, TSMC's 3nm production brought in around $1.698 billion, which is lower than $2.943 billion in the previous quarter. Meanwhile, TSMC's other advanced process technologies increased their revenue share: N5 (5 nm-class) accounted for 37% (up from 35%), and N7 (7 nm-class) commanded 19% (up from 17%). Though both remained relatively flat in terms of revenue, at $6.981 billion and $3.585 billion, respectively.

Generally, advanced technology nodes (N7, N5, N3) generated 65% of TSMC's revenue (down 2% from Q4 2023), while the broader category of FinFET-based process technologies contributed 74% to the company's total wafer revenue (down 1% from the previous quarter).

TSMC itself attributes the steep decline of N3's contribution to seasonally lower demand for smartphones in the first quarter as compared to the fourth quarter, which may indeed be the case as demand for iPhones typically slowdowns in Q1. Along those lines, there have also been reports about a drop in demand for the latest iPhones in China.

But even if A17 Pro production volumes are down, Apple remains TSMC's lead customer for N3B, as the fab also produces their M3, M3 Pro, and M3 Max processors on the same node. These SoCs are larger in terms of die sizes and resulting costs, so their contribution to TSMC's revenue should be quite substantial.

"Moving on to revenue contribution by platform. HPC increased 3% quarter-over-quarter to account for 46% of our first quarter revenue," said Huang. "Smartphone decreased 16% to account for 38%. IoT increased 5% to account for 6%. Automotive remained flat and accounted for 6%, and DCE increased 33% to account for 2%."

Meanwhile, as demand for AI and HPC processors will continue to increase in the coming years, TSMC expects its HPC platform to keep increasing its share in its revenue going forward.

"We expect several AI processors to be the strongest driver of our HPC platform growth and the largest contributor in terms of our overall incremental revenue growth in the next several years," said C.C. Wei, chief executive of TSMC.

This week ASML is making two very important announcements related to their progress with high numerical aperature extreme ultraviolet lithography (High-NA EUV). First up, the company's High-NA EUV prototype system at its fab in Veldhoven, the Netherlands, has printed the first 10nm patterns, which is a major milestone for ASML and their next-gen tools. Second, the company has also revealed that it's second High-NA EUV system is now out the door as well, and has been shipped to an unnamed customer.

"Our High-NA EUV system in Veldhoven printed the first-ever 10 nanometer dense lines," a statement by ASML reads. "Imaging was done after optics, sensors and stages completed coarse calibration. Next up: bringing the system to full performance. And achieving the same results in the field."

Our High NA EUV system in Veldhoven printed the first-ever 10 nanometer dense lines. ✨ Imaging was done after optics, sensors and stages completed coarse calibration.

Next up: bringing the system to full performance. And achieving the same results in the field. ⚙️ pic.twitter.com/zcA5V0ScUf

— ASML (@ASMLcompany) April 17, 2024

Alongside the system shipped to Intel at the end of 2023, ASML has retained their own Twinscan EXE:5000 scanner at their Veldhoven, Netherlands, facility, which is what the company is using for further research and development into High-NA EUV. Using that machine, the company has been able to print dense lines spaced 10 nanometers apart, which is a major milestone in photolithography development. Previously, only small-scale, experimental lab machines have been able to achieve this kind of a resolution. Eventually, High-NA EUV tools will achieve a resolution of 8 nm, which will be instrumental to build logic chips on technologies beyond 3 nm.

Intel's Twinscan EXE:5000 scanner at its D1X fab near Hillsboro, Oregon is also close behind, and its assembly is said to be nearing completion. That machine will be primarily used for Intel's own High-NA EUV R&D, with Intel slated to use its successor — the commercial-grade Twinscan EXE:5200 — to produce its chips on its Intel 14A (1.4 nm-class) in mass quantities in 2026 – 2027.

But Intel will not be the only chipmaker that gets to experiment with a High-NA EUV scanner for very long. As revealed by ASML, the company recently started shipping another Twinscan EXE:5000 machine to yet another customer. The fab tool maker is not disclosing the client, but previously it has said that all of leading logic and memory producers are in the process of procuring High-NA tools for R&D purposes, so the list of 'suspects' is pretty short.

"Regarding High-NA, or 0.55 NA EUV, we shipped our first system to a customer and this system is currently under installation," said Christophe Fouquet, chief business officer of ASML, at the company's earnings conference call with analysts and investors. "We started to ship the second system this month and its installation is also about to start."

While Intel plans to adopt High-NA EUV tools ahead of the industry, other chipmakers seem to a bit more cautious and plan to rely on risky yet already known Low-NA EUV double patterning method for production a 3 nm and 2 nm. Still, regardless of the exact timing for a transition, all of the major fabs will be relying on High-NA EUV tools in due time. So all parties have an interest in how ASML's R&D turns out.

"The customer interest for our [High-NA] system lab is high as this system will help both our Logic and Memory customers prepare for High-NA insertion into their roadmaps," said Fouquet. "Relative to 0.33 NA, the 0.55 NA system provides finer resolution enabling an almost 3x increase in transistor density, at a similar productivity, in support of sub-2nm Logic and sub-10nm DRAM nodes."

Sources: ASML/X, ASML, Reuters

While neuromorphic computing remains under research for the time being, efforts into the field have continued to grow over the years, as have the capabilities of the specialty chips that have been developed for this research. Following those lines, this morning Intel and Sandia National Laboratories are celebrating the deployment of the Hala Point neuromorphic system, which the two believe is the highest capacity system in the world. With 1.15 billion neurons overall, Hala Point is the largest deployment yet for Intel’s Loihi 2 neuromorphic chip, which was first announced at the tail-end of 2021.

The Hala Point system incorporates 1152 Loihi 2 processors, each of which is capable of simulating a million neurons. As noted back at the time of Loihi 2’s launch, these chips are actually rather small – just 31 mm² per chip with 2.3 billion transistors each, as they’re built on the Intel 4 process (one of the only other Intel chips to do so, besides Meteor Lake). As a result, the complete system is similarly petite, taking up just 6 rack units of space (or as Sandia likes to compare it to, about the size of a microwave), with a power consumption of 2.6 kW. Now that it’s online, Hala Point has dethroned the SpiNNaker system as the largest disclosed neuromorphic system, offering admittedly just a slightly larger number of neurons at less than 3% of the power consumption of the 100 kW British system.

A Single Loihi 2 Chip (31 mm²)

Hala Point will be replacing an older Intel neuromorphic system at Sandia, Pohoiki Springs, which is based on Intel’s first-generation Loihi chips. By comparison, Hala Point offers ten-times as many neurons, and upwards of 12x the performance overall,

Both neuromorphic systems have been procured by Sandia in order to advance the national lab’s research into neuromorphic computing, a computing paradigm that behaves like a brain. The central thought (if you’ll excuse the pun) is that by mimicking the wetware writing this article, neuromorphic chips can be used to solve problems that conventional processors cannot solve today, and that they can do so more efficiently as well.

Sandia, for its part, has said that it will be using the system to look at large-scale neuromorphic computing, with work operating on a scale well beyond Pohoiki Springs. With Hala Point offering a simulated neuron count very roughly on the level of complexity of an owl brain, the lab believes that a larger-scale system will finally enable them to properly exploit the properties of neuromorphic computing to solve real problems in fields such as device physics, computer architecture, computer science and informatics, moving well beyond the simple demonstrations initially achieved at a smaller scale.

One new focus from the lab, which in turn has caught Intel’s attention, is the applicability of neuromorphic computing towards AI inference. Because the neural networks themselves behind the current wave of AI systems are attempting to emulate the human brain, in a sense, there is an obvious degree of synergy with the brain-mimicking neuromorphic chips, even if the algorithms differ in some key respects. Still, with energy efficiency being one of the major benefits of neuromorphic computing, it’s pushed Intel to look into the matter further – and even build a second, Hala Point-sized system of their own.

According to Intel, in their research on Hala Point, the system has reached efficiencies as high as 15 TOPS-per-Watt at 8-bit precision, albeit while using 10:1 sparsity, making it more than competitive with current-generation commercial chips. As an added bonus to that efficiency, the neuromorphic systems don’t require extensive data processing and batching in advance, which is normally necessary to make efficient use of the high density ALU arrays in GPUs and GPU-like processors.

Perhaps the most interesting use case of all, however, is the potential for being able to use neuromorphic computing to enable augmenting neural networks with additional data on the fly. The idea behind this being to avoid re-training, as current LLMs require, which is extremely costly due to the extensive computing resources required. In essence, this is taking another page from how brains operate, allowing for continuous learning and dataset augmentation.

But for the moment, at least, this remains a subject of academic study. Eventually, Intel and Sandia want systems like Hala Point to lead to the development of commercial systems – and presumably, at even larger scales. But to get there, researchers at Sandia and elsewhere will first need to use the current crop of systems to better refine their algorithms, as well as better figure out how to map larger workloads to this style of computing in order to prove their utility at larger scales.

Samsung today has announced that they have developed an even faster generation of LPDDR5X memory that is set to top out at LPDDR5X-10700 speeds. The updated memory is slated to offer 25% better performance and 30% greater capacity compared to existing mobile DRAM devices from the company. The new chips also appear to be tangibly faster than Micron's LPDDR5X memory and SK hynix's LPDDR5T chips.

Samsung's forthcoming LPDDR5X devices feature a data transfer rate of 10.7 GT/s as well as maximum capacity per stack of 32 GB. This allows Samsung's clients to equip their latest smartphones or laptops with 32 GB of low-power memory using just one DRAM package, which greatly simplifies their designs. Samsung says that 32 GB of memory will be particularly beneficial for on-device AI applications.

Samsung is using its latest-generation 12nm-class DRAM process technology to make its LPDDR5X-10700 devices, which allows the company to achieve the smallest LPDDR device size in the industry, the memory maker said.

In terms of power efficiency, Samsung claims that they have integrated multiple new power-saving features into the new LPDDR5X devices. These include an optimized power variation system that adjusts energy consumption based on workload, and expanded intervals for low-power mode that extend the periods of energy saving. These innovations collectively enhance power efficiency by 25% compared to earlier versions, benefiting mobile platforms by extending battery life, the company said.

“As demand for low-power, high-performance memory increases, LPDDR DRAM is expected to expand its applications from mainly mobile to other areas that traditionally require higher performance and reliability such as PCs, accelerators, servers and automobiles,” said YongCheol Bae, Executive Vice President of Memory Product Planning of the Memory Business at Samsung Electronics. “Samsung will continue to innovate and deliver optimized products for the upcoming on-device AI era through close collaboration with customers.”

Samsung plans to initiate mass production of the 10.7 GT/s LPDDR5X DRAM in the second half of this year. This follows a series of compatibility tests with mobile application processors and device manufacturers to ensure seamless integration into future products.

Iceberg Thermal Inc. is one of the newer players in the PC cooling market. The company was founded in 2019 by an experienced team of designers and engineers setting off on their own, aiming to deliver a wide range of PC cooling products to industrial and commercial users alike. They only have a handful of retails products currently available, with the vast majority of them being CPU air coolers, but they have just launched their first liquid cooler products, the IceFLOE Oasis series.

In today’s review, we are having a look at the IceFLOE Oasis 360mm AIO (All-In-One) CPU cooler, the larger of the company's two recently-released liquid coolers. The IceFLOE Oasis CPU cooler targets the high-performance PC cooling market with a sub-$100 price point, aiming to deliver the performance needed to effectively cool a power-hungry processor without being a drain on the wallet in the process. This cooler features a 360mm radiator for an ample heat dissipation area, as well as housing for three high-airflow 120 mm fans. The IceFLOE Oasis supports a wide range of Intel and AMD socket types, making it compatible with a broad spectrum of CPUs. Additionally, it offers advanced RGB lighting, allowing users to customize the aesthetic of their cooling system.

Samsung Electronics this week was awarded up to $6.4 billion from the U.S. government under the CHIPS and Science Act to build its new fab complex in Taylor, Texas. This is the third major award under the act in the last month, with all three leading-edge fabs – Intel, TSMC, and now Samsung – receiving multi-billion dollar funding packages under the domestic chip production program. Overall, the final price tag on Samsung's new fab complex is expected to reach $40 billion by the time it's completed later this decade.

Samsung's CHIPS Act funding was announced during a celebratory event attended by U.S. Secretary of Commerce Gina Raimondo and Samsung Semiconductor chief executive Kye Hyun Kyung.  During the event, Kyung outlined the strategic goals of the expansion, emphasizing that the additional funding will not only increase production capacity but also strengthen the entire local semiconductor ecosystem. Samsung plans to equip its fab near Taylor, Texas, with the latest wafer fab tools to produce advanced chips. The Financial Times reports that Samsung aims to produce semiconductors on its 2nm-class process technology starting 2026, though for now this is unofficial information.

"I am pleased to announce a preliminary agreement between Samsung and the Department of Commerce to bring Samsung's advanced semiconductor manufacturing and research and development to Texas," said Joe Biden, the U.S. president, in a statement. "This announcement will unleash over $40 billion in investment from Samsung, and cement central Texas's role as a state-of-the-art semiconductor ecosystem, creating at least 21,500 jobs and leveraging up to $40 million in CHIPS funding to train and develop the local workforce. These facilities will support the production of some of the most powerful chips in the world, which are essential to advanced technologies like artificial intelligence and will bolster U.S. national security."

Samsung has been a significant contributor to the Texas economy for decades, starting chip manufacturing in the U.S. in 1996. With previous investments totaling $18 billion in its Austin operations, Samsung's expansion into Taylor with an additional investment of at least $17 billion underscores its role as one of the largest foreign direct investors in U.S. history. The total expected investment in the new fab surpasses $40 billion, making it one of the largest for a greenfield project in the nation and transforming Taylor into a major hub for semiconductor manufacturing.

The CEO highlighted the substantial economic impact of Samsung's operations, noting a nearly double increase in regional economic output from $13.6 billion to $26.8 billion between 2022 and 2023. The ongoing expansion is projected to further stimulate economic growth, create thousands of jobs, and enhance the community's overall development.

“We are not just expanding production facilities; we’re strengthening the local semiconductor ecosystem and positioning the U.S. as a global semiconductor manufacturing destination.” said Kyung. “To meet the expected surge in demand from U.S. customers, for future products like AI chips, our fabs will be equipped for cutting-edge process technologies and help bring security to the U.S. semiconductor supply chain.”

Samsung is also committed to environmental sustainability and workforce development. The company plans to operate using 100% clean energy and incorporate advanced water management technologies. Additionally, it is investing in education and training programs to develop a new generation of semiconductor professionals. These initiatives include partnerships with educational institutions and programs tailored for military veterans.

In his remarks, Kyung expressed gratitude to President Biden, Secretary Raimondo, and other governmental and community supporters for their ongoing support. This collaborative effort between Samsung and various levels of government, as well as the local community, is pivotal in advancing America's semiconductor industry and ensuring its global competitiveness.

"Today’s announcement will help Samsung bring more semiconductor production, innovation, and jobs to U.S. shores, reinforcing America’s economy, competitiveness, and critical chip supply chains," a statememt by the Semiconductor Industry Associate reads. "We applaud Samsung for investing boldly in U.S.-based manufacturing and salute the U.S. Commerce Department for making significant headway in implementing the CHIPS Act’s manufacturing incentives and R&D programs. We look forward to continuing to work with leaders in government and industry to ensure the CHIPS Act remains on track to help reinvigorate U.S. chip manufacturing and research for many years to come."

With NVIDIA’s Turing architecture turning six years old this year, the company has been retiring many of the remaining Turing products from its video card lineup. And today that spirit of spring cleaning is coming to the entry-level segment of NVIDIA’s professional visualization lineup, where NVIDIA is introducing a pair of new desktop cards based on their low-end Ampere hardware.

The new RTX A1000 and RTX A400 cards will be replacing the T1000/T600/T400 lineup, which was released three years ago in 2021. The new cards slot into the same entry-level category and finally finish fleshing out the RTX A series of proviz cards, offering NVIDIA’s Ampere-generation professional graphics technologies in the lowest-power, lowest-performance, lowest-cost configuration possible.

Notably, since the entry-level T-series were based on NVIDIA’s feature-limited TU11x silicon, which lacked ray tracing and tensor core support – the basis of NVIDIA’s RTX technologies and associated branding – this marks the first time these technologies will be available in NVIDIA’s entry-level desktop proviz cards. And accordingly, these are being promoted to RTX-branded video cards, ending the odd overlap with NVIDIA’s compute cards, which never carry RTX branding.

It goes without saying that as low-end cards, the ray tracing performance of either part is nothing to write home about, but it gives NVIDIA’s current proviz lineup a consistent set of graphics features from top to bottom.

NVIDIA Professional Visualization Card Specification Comparison
	A1000	A400	T1000	T400
CUDA Cores	2304	768	896	384
Tensor Cores	72	24	N/A	N/A
Boost Clock	1460MHz	1755MHz	1395MHz	1425MHz
Memory Clock	12Gbps GDDR6	12Gbps GDDR6	10Gbps GDDR6	10Gbps GDDR6
Memory Bus Width	128-bit	64-bit	128-bit	64-bit
VRAM	8GB	4GB	8GB	4GB
Single Precision	6.74 TFLOPS	2.7 TFLOPS	2.5 TFLOPS	1.09 TFLOPS
Tensor Performance	53.8 TFLOPS	21.7 TFLOPS	N/A	N/A
TDP	50W	50W	50W	30W
Cooling	Active, SS	Active, SS	Active, SS	Active, SS
Outputs	4x mDP 1.4a		4x mDP 1.4a	3x mDP 1.4a
GPU	GA107		TU117
Architecture	Ampere		Turing
Manufacturing Process	Samsung 8nm		TSMC 12nm
Launch Date	04/2024	05/2024	05/2021	05/2021

Both the A1000 and A400 are based on the same board design, with NVIDIA doing away with any pretense of physical feature differentiation this time around (T400 was missing its 4^th Mini DisplayPort). This means both cards are based on the GA107 GPU, sporting different core and memory configurations.

RTX A1000 is a not-quite-complete configuration of GA107, with 2304 CUDA cores and 72 tensor cores. This is paired with 8GB of GDDR6, which runs at 12Gbps, for a total of 192GB/second of memory bandwidth. The TDP of the card is 50 Watts, matching its predecessor.

Meanwhile RTX A400 is far more cut down, offering about a third of the active hardware on the GPU itself, and half the memory bandwidth. On paper this gives it around 40% of T1000’s performance, and half the memory bandwidth – or 96GB/second. Notably, despite the hardware cut-down, the official TDP is still 50 Watts, versus the 30 Watts of its predecessor. So at this point NVIDIA will soon cease offering a desktop proviz card lower than 50 Watts.

As noted before, both cards otherwise feature the same physical design, with a half-height half-length (HHHL) board with active cooling. As you’d expect from such low-TDP cards, these are single-slot cooler designs. Both cards feature a quartet of Mini DisplayPorts, with the same DP 1.4a functionality that we’ve seen across all of NVIDIA’s products for the last several years.

Finally, video-focused users will want to make note that the A1000/A400 have slightly different video capabilities. While A1000 gets access to both of GA107’s NVDEC video decode blocks, A400 only gets access to a single block – one more cutback to differentiate the two cards. Otherwise, both video cards get access to the GPU’s sole NVENC block.

According to NVIDIA, the RTX A1000 will be available starting today through its distribution partners. Meanwhile the RTX A400 will hit distribution channels in May, and with OEMs expected to begin offering the cards as part of their pre-built systems this summer.

SK hynix is one of the few vertically integrated manufacturers in the flash-based storage market. The company is well-established in the OEM market. A few years back, they also started exploring direct end-user products. Internal SSDs (starting with the Gold S31 and Gold P31) were the first out of the door. Late last year, the company introduced the Beetle X31 portable SSD, its first direct-attached storage product. In February, a complementary product was introduced - the Tube T31 Stick SSD.

The Beetle X31 is a portable SSD with a Type-C upstream port and a separate cable. The Tube T31 is a take on the traditional thumb drive with a male Type-A interface. The size of the Beetle X31 makes the use of a bridge solution obvious. Our investigation into the Tube T31 also revealed the use of the same internal SSD, albeit with a different bridge. Read on for a detailed look at the Tube T31, including an analysis of its internals and evaluation of its performance consistency, power consumption, and thermal profile.