A technical paper titled “Current-induced switching of a van der Waals ferromagnet at room temperature” was published by researchers at Massachusetts Institute of Technology (MIT).

Abstract:

“Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM discovery, a solution for non-volatile, deterministic switching of vdWMMs at room temperature has been missing, limiting the prospects of their adoption into commercial spintronic devices. Here, we report the first demonstration of current-controlled non-volatile, deterministic magnetization switching in a vdW magnetic material at room temperature. We have achieved spin-orbit torque (SOT) switching of the PMA vdW ferromagnet Fe3GaTe2  using a Pt spin-Hall layer up to 320 K, with a threshold switching current density as low as J_sw = 1.69 × 10⁶ A cm^-2 at room temperature. We have also quantitatively estimated the anti-damping-like SOT efficiency of our Fe3GaTe2/Pt bilayer system to be ξ_DL = 0:093, using the second harmonic Hall voltage measurement technique. These results mark a crucial step in making vdW magnetic materials a viable choice for the development of scalable, energy-efficient spintronic devices.”

Find the technical paper here. Published February 2024. MIT’s related news article and video is here.

Kajale, S.N., Nguyen, T., Chao, C.A. et al. Current-induced switching of a van der Waals ferromagnet at room temperature. Nat Commun 15, 1485 (2024). https://doi.org/10.1038/s41467-024-45586-4

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