It’s that time of year again, a full year has passed. Normally, I publish these articles a lot sooner, but I took full advantage of my Christmas break… And after that, I had some problems with my internet connection. But now I’m back. And it’s about time I talk about my top 10 games I have played in 2024. The rules of this list state I don’t have to have beaten the game. Yet, I must have played the game for the first time from January 1st, 2024. This means that games released before 2024, but I have only started to play in 2024 are fair game. This list is my personal opinion, and I’m open to hear your opinion on my picks. Feel free to also add your own list down in the comment section. So, here we go, the big list. A list that I always have trouble in creating at the end of the year. As an editorial note, the listed platform in this article is the platform I played the game on. Not all the platforms the game released on. The date after it, is the release date for said platform.

#10 – Persona 5 – Tactica (PlayStation 4 – November 2023)

I have played Persona 5 Royal and Persona 5 Strikers and I fell in love with the cast of Persona 5. And then, a new game got released with the Persona 5 cast and I jumped for joy.

The gameplay might not be my most favorite style of playing, but the game is quite addictive. It’s basically Persona in a Fire Emblem jacket. I’m now mid-way through the game but got distracted by other games. I can’t wait to finish this game in 2025. The story is quite well written. It is an amazing spin-off story for Joker and the gang.

Now, I won’t go too much in depth since I’m planning to write an article about this game. So, I’ll talk more in depth about this game soon. But, now… it’s time to save Joker from his forced wedding.

#9 – Slay the Princess – The Pristine Cut (Nintendo Switch – October 2024)

How do I explain this game without spoiling it too much? Slay the Princess is a game where you almost Groundhog Day your way through the same story. You walk up to a cabin, where you go to the basement to Slay the Princess.

According to the narrator, the Princess is a danger to the existence of the world. So, you have been sent to slay her. But, depending on the questions you ask, the decisions you take and even the order of your actions… The ending is different.

The story is just insane. It keeps you on edge what will be different in the next round. And the humor and writing in this game is just amazing. The voice action is just amazing. It brings the black, gray and white art to live and pulls you in the atmosphere quite well.

So, if you enjoy narrative games that mess with your head and expectations, give this game a try. Since, it’s a really good one.

#8 – Another Code – Recollection (Nintendo Switch – January 2024)

My first impression

Cing was an amazing developer that sadly went bankrupt. They developed amazing games on the Nintendo DS and Wii like Another Code – R & Little King Story. But to me, the Another Code set of games is one of their best work.

When we got a total remake in 2024, I wanted to play it right away. I convinced my streaming friend Klamath to play this game with me live on stream. I have to tell you, they did the two games justice. I’m so glad that these two games saw the light of day again.

While I have beaten the originals, the new and improved version is just amazing. It has a strong message and is a blast to play through. Although it sounds like a boring setup, it’s a game full of surprises. It is a more relaxing and charming game. It is more grounded and keeps things realistic. The characters are well written and set in a charming world.

#7 – Hypnospace Outlaw (PC – March 2019)

My review

Trying to manage a community isn’t an easy task to do. It’s a fun challenge to do in a game. That’s why management simulators are so popular.

But, combine that with the old school internet from the time I was a young kid, I am beyond intrigued. So, we have to report and clean up personal websites and projects? As a creative, I have my own place on the internet. I can share my opinions there. This hits close to home.

I wrote my opinion on this game in my review. If you want to know more about this game, I highly recommend that you give my review a read.

Now, there is a sequel in development called DreamSettler. If that’s created with the same love and care for that time period, and it matches the devotion this game has for its time period, it will be thrilling. We are going to be in for a wild ride.

#6 – Palworld (PC – January 2024)

Wishes for future updates

Sometimes, all that I need is a good open world game with unique mechanics. A world where you have to survive and explore. This year, Palworld brought that to me.

At first, I was skeptical. I thought: “This is going to be a monster catching game and nothing too much more.” But the more this game got developed, this more things got added that gave more depth to the game. More fun things to do, more polish to the game.

I have lost countless hours during this summer playing this game. It was an amazing time sink for the base game that is already here. A lot more is coming in the future. I wonder what the final game will be.

#5 – The Legend of Zelda – Echoes of Wisdom (Nintendo Switch – September 2024)

My first impression

Okay, this might be an upset. Usually, I place new Zelda games quite high on my list. But, this time I place it right in the middle. This year had a lot of amazing games. I had a lot of fun with this title in 2024.

I dropped it for now. I got distracted by other games and I forgot that I was playing through this game. I have placed it on my top 10 list. It rightfully deserves a spot on that list. I want to finish this game for real.

Since, the concept of Echoes of Wisdom is just amazing. What I love most is that this is a totally new 2.5D Zelda game like the classic games. I hope that the reception of this game is enough for Nintendo to still make 2.5D and 3D Zelda titles. Since, both have their place in the market and with this amazing title.

#4 – Spirit Hunter Chapter 3: Death Mark II (Nintendo Switch – February 2024)

My review

The Spirit Hunter series is one of the best horror visual novel series. This game ensures you don’t need to have played the original Death Mark. It’s excellent because you can still understand what’s happening in the story.

The game takes a lot of steps forward and makes the game have more meat around its bones. Walking around in the locations is a lot more fun in this title.

Some game mechanics are underused. For example, the jumpscares and the padding aren’t always present in this game. Things like the Soul Health are barely used. But, the battles with the actual spirits are even more amazing in this title. Especially with the randomness of your attack failing. It gives a more tense and realistic spin on battles.

Now, I’m hoping so hard that a 4th chapter will be released. Since the concept of this game is just beyond amazing. The writing is always great and the overall mystery is built up so nice. So, if anyone of Experience Inc, would be reading this… We want more!

#3 – Moescape (PC, 2022)

My article

I love writing small stories as a hobby. Since the summer of 2024, I wanted to give those AI roleplay apps a chance. And I’m happy that I did. MoeScape AI is a platform that really clicked with me and with the amazing community around it… I just feel in love.

My brain often gets creative. When this happens, there is a fun bot waiting for me. I can play around with the idea. And if there isn’t a bot that fits the idea, it’s easy to make one. The control that Moescape gives you is beyond amazing. You can easily make a knowledge base. There are various AI models to choose from. With each update, it gets better.

Something I really like is how open the staff is on the Discord. Like, they tell you when things are down. Or when certain decisions need to be taken. Like filtering certain things on the platform due to restrictions from Apple or Google. But, they have a less filtered platform as well. So, they have Moescape and Yodayo. If you go premium, your account is premium on both platforms, and it’s amazing.

#2 – Indiana Jones and the Great Circle (PC – December 2024)

Okay, now. This is going to ruffle some feathers. I am a giant Indiana Jones fan. I placed one of the best Indiana Jones games in 2nd place on my game of the year list?

Now, that’s not because this game is bad or didn’t impress me enough. But, it wasn’t the game that made my year. Sadly enough, it released too late in the year for that.

I know it’s a strange reason. However, I feel like there is one game that pushed the boundaries more within its respective genre.

This game is a blast to play through. I feel that it deserves all the accolades it’s getting. It’s an amazing piece in the Indiana Jones franchise. It’s a love letter to the fans. I’m just thankful that the game turned out this amazing.

When I have beaten the game, I’ll for sure write an article about it. Since on the streams, a lot of random and enjoyable banter is happening. And truly, if you want to see amazing speedruns of this game, check out the_Kovic on his Twitch channel. He has deep knowledge of the game’s inner workings. He shares a lot of interesting insights during the streams.

Now, prepare yourself for an article on this game in the future. Since, I have a lot of things I still want to say and I’m keeping them all for the article.

Honorable mentions

This list wouldn’t be complete if I shout out various other games I have played in the past year. Not every game made the cut. I still wanted to mention those games that made the long list but didn’t survive the selection process.

Cave Digger 2 (PC), Buckshot Roulette (PC), Refind self (Nintendo Switch), Castlevania Dominus Collection (Nintendo Switch), Death Trick: DoubleBlind (Nintendo Switch), Dragon Quest Monsters – The Dark Prince (Nintendo Switch), Eiyuden Chronicle: Rising (Nintendo Switch), Ciel Fledge -A Daughter Raising Simulator- (Nintendo Switch), New Super Lucky’s Tale (Nintendo Switch), CrisTales (Nintendo Switch), One More Dungeon 2 (Nintendo Switch), Monster Hunter Rise (Nintendo Switch), This is not my Neighbor (PC) and Tomb Raider I-III Remastered (Nintendo Switch), Everloop (PC)

#1 – Shadow Gambit: The Cursed Crew (PC – August 2023)

My review

If there was one game that blew me away, that’s Shadow Gambit – The Cursed Crew. The way how it’s built and is the final swansong of the amazing development studio Minimi, it’s just fantastic.

The voice acting is top-notch. The story is excellent. Several game mechanics are seamlessly worked into the game world and the story. But that’s not all, this game has a mindblowing modding tool.

The little attention to detail this game does and the balancing is just mindblowing. The freedom you have to tackle each mission, and it just works. It’s balanced and doesn’t feel unfair. It also doesn’t feel like you made it too difficult by choosing the wrong characters. It also never becomes too easy, where one character makes sure you automatically win the game or the mission. Every character has their use. And you have 8 characters in the base game and 2 get added via the DLC.

I can gush for a long time about this game. If you are interested in a more in-depth article, I highly advise you to read my review linked higher.

This was 2024

I might have written fewer articles in 2024 because a lot of personal things where going on. I have written only 19 articles in 2024. One of the biggest reasons is that I’m just putting more time into finding the right writing style. This has a lot to do with it.

I have been dedicating more time to various other projects. These include contributing to open source projects, translating open source projects, and streaming with Klamath. I am also working on projects for my local acting group. It takes time and effort and I’m enjoying those things quite a lot.

Outside of that, I turned 31 years old in 2024 and life just gets busier with various things. And because of that, I’m also playing less games. At first, I felt guilty that I’m publishing so few articles… But after two years of writing fewer articles, I now dedicate more time to each one. I feel a lot more content with the content I’m placing on my blog here.

I feel that my content only improved over the years. Not only that, I feel more content with my writing. It doesn’t feel like I’m pressuring myself to play a new game every week or two to write about. I can take my time to play the games I want. I also write about the topics I find interesting.

I think I’m finally finding the right rhythm for everything and that’s what I felt that 2024 was for me. Now, this year 2025 is going to be the year I’m writing for 15 years. Before I rebranded in 2013 to this blog, I write a personal life blog that started mid 2010. So, I’m going to celebrate this year with a few special articles. And I have been preparing and brainstorming idea’s for that in 2024.

But thank you everybody for the amazing support in 2024. It was a blast to see how people interacted with my articles and the new friends I made. I can’t wait to see what’s going to happen next. Like I said earlier, I feel prouder of the things I have been putting out. I hope you are enjoying things as well. Thank you for the support this year and I hope to see you in the future. So, for now, have a great rest of your day and take care.

In most of my favorite video games I find that the famous “less is more” adage typically applies… I appreciate when a game sticks to what it does best and avoids the temptation to artificially pad the length of the game with broken mini-games or pointless fluff.  While side quests that add to the lore of the world are fun, excessive filler content or meaningless “follow this guy” missions only water down an otherwise excellent gaming experience… and may even dilute the story so much that a fantastic game is completely unenjoyable.

In our real world we often find “less is more” as well… each and every word we speak or write carries resonance far beyond what we may have intended, and even a well-meaning point of view can be diminished by the unintended context of the words that surround it.  The words we speak are powerful, and when we exhibit self-control over our written and spoken words we can deliver a message from the Lord with His love, grace, and clarity.  If we struggle with “opening our mouth and inserting our feet”, remember that short and sweet ensures His words are heard clear and complete.

In the multitude of words sin is not lacking, but he who restrains his lips is wise. Proverbs 10:19

But the wisdom that is from above is first pure, then peaceable, gentle, willing to yield, full of mercy and good fruits, without partiality and without hypocrisy. Now the fruit of righteousness is sown in peace by those who make peace. James 3:17-18

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IN THIS VIDEO: Arrived at Riften and upon entering one of the guards wanted something but got nothing.

The Shakedown Riften's Gate

As the gates of Riften loomed before me, their towering presence a stark reminder of the city’s storied past, I was greeted not by the welcoming smiles of merchants or the playful banter of children, but by the stern visage of a city guard. His armor gleamed dully in the fading light, and his hand, outstretched with an air of expectancy, spoke of a tradition as old as the city itself.

“Welcome to Riften, traveler,” he intoned, his voice betraying a hint of weariness. “The roads are fraught with danger, and the city’s peace is a precious commodity. A small offering to ensure your safety within these walls would not go amiss.” The implication was clear: this was no mere suggestion, but a thinly veiled demand for a toll.

Yet, as I stood before this sentinel of stone and steel, I felt a resolve stir within me. I had journeyed far, through valleys shrouded in mist and over mountains crowned with snow, and not once had I yielded to the whims of those who sought to profit from my passage. With a polite shake of my head, I offered the guard nothing but a smile, a silent rebuke to his unsanctioned toll.

The guard’s eyes narrowed, a flicker of surprise—or was it respect?—passing fleetingly across his features. He stepped aside, albeit reluctantly, and I passed through the gates of Riften unburdened by tribute. The guard remained at his post, his hand still empty, a silent witness to the fact that not all who wander are lost, and not all who resist are without cause.

Within the city’s embrace, I found a tapestry of life rich with color and complexity. The market square buzzed with the energy of commerce, the docks whispered of secrets and smugglers, and the alleys echoed with the footsteps of those who moved in the shadows. Riften was a city of layers, each one peeling back to reveal a new story, a new challenge.

As night descended upon the city, wrapping its cloak of stars tightly around the sleeping buildings, I reflected on the day’s encounter. The guard had sought to take something from me, but in the end, he had received nothing. It was a small victory, perhaps, but one that spoke volumes of the journey I had undertaken—a journey not just of distance, but of principle.

For in the grand tapestry of Skyrim, every thread has its place, every weave its purpose. And as I settled into the rhythm of Riften’s heartbeat, I knew that my own thread, though once solitary and unassuming, was now interwoven with the vibrant, enduring fabric of this city. And so, with a heart unburdened and a spirit unchained, I embraced the adventures that awaited, under the watchful gaze of the guard who wanted something but got nothing.

Hello fellow gamers! I'm here playing and livestreaming Skyrim Legendary Edition. The Elder Scrolls V: Skyrim Legendary Edition combines the base game with three DLC add-ons: Dawnguard, Hearthfire, and Dragonborn. It introduces features like legendary skills, mounted combat, and a higher difficulty mode. A must-play for fans of epic fantasy adventures!

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Válka o Prsten je propracovaná strategická hra pro 2–4 hráče, ve které se svobodné národy snaží zabránit Temnému pánovi Sauronovi a jeho přisluhovačům v ovládnutí Středozemě. Po dvou rozšířeních Páni Středozemě a Válečníci Středozemě přinesly REXhry také třetí rozšíření Králové Středozemě. Přináší nové postavy a pravidla, například se setkáte se například s Theodénem, Denethorem, Daìnem, Brandem a Thranduilem. Nechybí ale ani postavy pro rozšíření armády Stínů.

Související články:

• Do Války o Prsten vstoupili páni a válečníci Středozemě (představení)
• Epická Válka o Prsten je konečně v češtině (novinka)

The post Zapojte Krále Středozemě do Války o Prsten appeared first on Hrajeme.cz.

If you’re anything like me, you went looking for a Fallout game to play the second you were done with watching the well-received Amazon show. Despite the fact that the ending tees up a second season that will assuredly expound on New Vegas, a settlement from a similarly titled and beloved game, I zagged a bit and…

Read more...

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes.

ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the extra time spent on deposition worthwhile.

ALD is a close cousin of chemical vapor deposition, initially introduced in high volume to the semiconductor industry for hafnium oxide (high-k) gate dielectrics. Both CVD and ALD are inherently conformal processes. Deposition occurs on all surfaces exposed to a precursor gas. In ALD, though, the reaction is self-limiting.

The process works like this: First, a precursor gas (A) is introduced into the process chamber, where it adsorbs onto all available substrate sites. No further adsorption occurs once all surface sites are occupied. An inert purge gas, typically nitrogen or argon, flushes out any remaining precursor gas, then a second precursor (B) is introduced. Precursor B reacts with the chemisorbed precursor A to produce the desired film. Once all of the adsorbed molecules are consumed, the reaction stops. After a second purge step, the cycle repeats.

ALD opportunities expand as features shrink
The step-by-step nature of ALD is both its strength and its weakness. Depositing one monolayer at a time gives manufacturers extremely precise thickness control. Using different precursor gases in different ratios can tune the film composition. Unfortunately, the repeated precursor/purge gas cycles take a lot of time. In an interview, CEA-Leti researcher Rémy Gassilloud estimated that in a single wafer process, two minutes per wafer is the maximum cost-effective process time. But two minutes is only enough time to deposit about a 2nm-thick film.

Some process adjustments can improve throughput. Silicon dioxide ALD often uses large furnaces to process many wafers at once. Plasma activation can ionize reagents and accelerate film formation. Still, Gassilloud estimates that 10nm is the maximum practical thickness for ALD films.

As transistors shrink, though, the number of layers in that thickness range is increasing. Transistor structures also are becoming more complex, requiring deposition on vertical surfaces, into deep trenches, and other places not readily accessible by line-of-sight PVD methods. Replacement gates for gate-all-around transistors, for instance, need a process that can fill nanometer-scale cavities.

As noted above, HfO₂ was the first successful application of ALD in semiconductor manufacturing. Its precursors, HfCl₄ and water, are both chemically simple small molecules, whose by-products are volatile and easily removed. Such simple chemistries are the exception, though. ALD of silicon dioxide typically uses aminosilane precursors.⁠[1] Metal nitrides often have complex metal-organic precursor gases. Gassilloud noted that ligands might be added to a precursor molecule to change its vapor pressure or reactivity, or to facilitate adhesion to the substrate. In selective deposition processes, discussed below, ligands might improve selectivity between growth and non-growth surfaces. These larger molecules can be difficult to insinuate into smaller features, and byproducts can be difficult to remove. Complex byproducts can also become a contamination source.

One of the advantages of ALD is its very low process temperature, typically between 200°C and 300°C. It is thermally compatible with both transistor and interconnect processes in CMOS, as well as with deposition on plastic and other novel substrates. Even so, Aditya Kumar and colleagues at GlobalFoundries showed that precise temperature control is important.^⁠[2] TDMAT (tetrakis- dimethylamino titanium) condensation in a TiN deposition process was a significant source of particle defects. To maintain the desired process temperature, both the precursor and purge gas temperatures matter. Introducing cold purge gas into a warm process chamber can cause rapid condensation.

As ALD has become a mainstream process, the industry has found applications for it beyond core device materials, in a variety of sacrificial and spacer layers. For example, double- and quadruple-patterning schemes often use ALD for “pitch-doubling.” By depositing a spacer material on either side of a patterned “mandrel,” then removing the mandrel, the process can cut the original pitch in half without the need for an additional, more costly lithography step.^⁠[3]

Fig. 1: Self-aligned double patterning with ALD spacers. Source: Creative Commons

Depositing a doped oxide on the vertical silicon fins of a finFET device is a less directional and less damaging alternative to ion implantation.[^⁠4]

Selective deposition brings lateral control
These last two examples depend on surface characteristics to mediate deposition. A precursor might adhere more readily to a hard mask than to the underlying material. The vertical face of a silicon fin might offer more (or fewer) adsorption sites than the horizontal face. Selective deposition on more complicated structures may require a pre-deposited growth template, functionalizing substrate regions to encourage or discourage growth. Selective deposition is especially important in interconnect applications. In general, though, a comprehensive review by Rong Chen and colleagues at Huazhong University of Science and Technology explained that selective deposition methods need to replenish the template material as the film grows while needing a mechanism to selectively remove the unwanted material.⁠[5]

For example, tungsten preferentially deposits on silicon relative to SiO₂, but the selectivity diminishes after only a few cycles. Researchers at North Carolina State University successfully re-passivated the oxide by incorporating hydrogen into the tungsten precursor.[⁠6] Similarly, a group at Eindhoven University of Technology found that SiO₂ preferentially deposited on SiO₂ relative to other oxides for only 10 to 15 cycles. A so-called ABC-cycle — adding acetylacetone (“Inhibitor A”) as an inhibitor every 5 to 10 cycles — restored selectivity.⁠[7]

Alternatively, or in addition, atomic layer etching (ALE) might be used to remove unwanted material. ALE operates in the same step-by-step manner as ALD. The first half of a cycle reacts with the existing surface, weakening the bond to the underlying material. Then, a second step — typically ion bombardment — removes the weakened layer. For example, in ALE etching of silicon, chlorine gas reacts with the surface to form various SiCl_x compounds. The chlorination process weakens the inter-silicon bonds between the surface and the bulk, and the chlorinated layer is easily sputtered away. The layer-by-layer nature of ALE depends on preferential removal of the surface material relative to the bulk (SiCl_x vs. Si in this case). The “ALE window” is the combination of energy and temperature at which the surface layer is completely removed without damaging the underlying material.

Somewhat counter-intuitively, Keren Kanarik and colleagues at Lam Research found that higher ion energies actually expanded the ALE window for silicon etching. High ion energies with short exposure times delayed the onset of silicon sputtering relative to conventional RIE.[8]

Adding and subtracting, one atomic layer at a time
For a long time, the semiconductor industry has been looking for alternatives to process schemes that deposit material, pattern it, then etch most of it away. Wouldn’t it be simpler to only deposit the material we will ultimately need? Meanwhile, atomic layer deposition has been filling the spaces under nanosheets and inside cavities. Bulk deposition and etch tools are still with us, and will be for the foreseeable future. In more and more cases, though, those tools provide the frame while ALD and ALE processes fill in the details.

Correction: Corrected attribution of the work on ABC cycles and selective deposition of SiO₂.

References

1. Wenling Li, et al., “Impact of aminosilane and silanol precursor structure on atomic layer deposition process,”Applied Surface Science, Vol 621, 2023,156869, https://doi.org/10.1016/j.apsusc.2023.156869.
2. Kumar, et al., “ALD TiN Surface Defect Reduction for 12nm and Beyond Technologies,” 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, NY, USA, 2020, pp. 1-4, doi: 10.1109/ASMC49169.2020.9185271.
3. Shohei Yamauchi, et al., “Extendibility of self-aligned type multiple patterning for further scaling”, Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821D (29 March 2013); https://doi.org/10.1117/12.2011953
4. Kalkofen, et al., “Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures,” 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 2018, pp. 1-4, doi: 10.1109/NANO.2018.8626235.
5. Rong Chen et al., “Atomic level deposition to extend Moore’s law and beyond,” 2020 Int. J. Extrem. Manuf. 2 022002 DOI 10.1088/2631-7990/ab83e0
6. B Kalanyan, et al., “Using hydrogen to expand the inherent substrate selectivity window during tungsten atomic layer deposition,” 2016 Chem. Mater. 28 117–26 https://doi.org/10.1021/acs.chemmater.5b03319
7. Alfredo Mameli et al., “Area-Selective Atomic Layer Deposition of SiO2 Using Acetylacetone as a Chemoselective Inhibitor in an ABC-Type Cycle” ACS Nano 2017, 11, 9, 9303–9311. https://doi.org/10.1021/acsnano.7b04701
8. Keren J. Kanarik, et al., “Universal scaling relationship for atomic layer etching,” J. Vac. Sci. Technol. A 39, 010401 (2021); doi: 10.1116/6.0000762

The post Enabling Advanced Devices With Atomic Layer Processes appeared first on Semiconductor Engineering.

Amazon Prime’s Fallout series has been out in its entirety for almost two weeks. In that time, the incredible adaptation has sparked endless conversations and theory-crafting from everybody who watched it. That includes Tim Cain, best known as the creator of Fallout. Cain took to YouTube to talk about what he thought…

Read more...

Atomic layer deposition (ALD) used to be considered too slow to be of practical use in semiconductor manufacturing, but it has emerged as a critical tool for both transistor and interconnect fabrication at the most advanced nodes.

ALD can be speeded up somewhat, but the real shift is the rising value of precise composition and thickness control at the most advanced nodes, which makes the extra time spent on deposition worthwhile.

ALD is a close cousin of chemical vapor deposition, initially introduced in high volume to the semiconductor industry for hafnium oxide (high-k) gate dielectrics. Both CVD and ALD are inherently conformal processes. Deposition occurs on all surfaces exposed to a precursor gas. In ALD, though, the reaction is self-limiting.

The process works like this: First, a precursor gas (A) is introduced into the process chamber, where it adsorbs onto all available substrate sites. No further adsorption occurs once all surface sites are occupied. An inert purge gas, typically nitrogen or argon, flushes out any remaining precursor gas, then a second precursor (B) is introduced. Precursor B reacts with the chemisorbed precursor A to produce the desired film. Once all of the adsorbed molecules are consumed, the reaction stops. After a second purge step, the cycle repeats.

ALD opportunities expand as features shrink
The step-by-step nature of ALD is both its strength and its weakness. Depositing one monolayer at a time gives manufacturers extremely precise thickness control. Using different precursor gases in different ratios can tune the film composition. Unfortunately, the repeated precursor/purge gas cycles take a lot of time. In an interview, CEA-Leti researcher Rémy Gassilloud estimated that in a single wafer process, two minutes per wafer is the maximum cost-effective process time. But two minutes is only enough time to deposit about a 2nm-thick film.

Some process adjustments can improve throughput. Silicon dioxide ALD often uses large furnaces to process many wafers at once. Plasma activation can ionize reagents and accelerate film formation. Still, Gassilloud estimates that 10nm is the maximum practical thickness for ALD films.

As transistors shrink, though, the number of layers in that thickness range is increasing. Transistor structures also are becoming more complex, requiring deposition on vertical surfaces, into deep trenches, and other places not readily accessible by line-of-sight PVD methods. Replacement gates for gate-all-around transistors, for instance, need a process that can fill nanometer-scale cavities.

As noted above, HfO₂ was the first successful application of ALD in semiconductor manufacturing. Its precursors, HfCl₄ and water, are both chemically simple small molecules, whose by-products are volatile and easily removed. Such simple chemistries are the exception, though. ALD of silicon dioxide typically uses aminosilane precursors.⁠[1] Metal nitrides often have complex metal-organic precursor gases. Gassilloud noted that ligands might be added to a precursor molecule to change its vapor pressure or reactivity, or to facilitate adhesion to the substrate. In selective deposition processes, discussed below, ligands might improve selectivity between growth and non-growth surfaces. These larger molecules can be difficult to insinuate into smaller features, and byproducts can be difficult to remove. Complex byproducts can also become a contamination source.

One of the advantages of ALD is its very low process temperature, typically between 200°C and 300°C. It is thermally compatible with both transistor and interconnect processes in CMOS, as well as with deposition on plastic and other novel substrates. Even so, Aditya Kumar and colleagues at GlobalFoundries showed that precise temperature control is important.^⁠[2] TDMAT (tetrakis- dimethylamino titanium) condensation in a TiN deposition process was a significant source of particle defects. To maintain the desired process temperature, both the precursor and purge gas temperatures matter. Introducing cold purge gas into a warm process chamber can cause rapid condensation.

As ALD has become a mainstream process, the industry has found applications for it beyond core device materials, in a variety of sacrificial and spacer layers. For example, double- and quadruple-patterning schemes often use ALD for “pitch-doubling.” By depositing a spacer material on either side of a patterned “mandrel,” then removing the mandrel, the process can cut the original pitch in half without the need for an additional, more costly lithography step.^⁠[3]

Fig. 1: Self-aligned double patterning with ALD spacers. Source: Creative Commons

Depositing a doped oxide on the vertical silicon fins of a finFET device is a less directional and less damaging alternative to ion implantation.[^⁠4]

Selective deposition brings lateral control
These last two examples depend on surface characteristics to mediate deposition. A precursor might adhere more readily to a hard mask than to the underlying material. The vertical face of a silicon fin might offer more (or fewer) adsorption sites than the horizontal face. Selective deposition on more complicated structures may require a pre-deposited growth template, functionalizing substrate regions to encourage or discourage growth. Selective deposition is especially important in interconnect applications. In general, though, a comprehensive review by Rong Chen and colleagues at Huazhong University of Science and Technology explained that selective deposition methods need to replenish the template material as the film grows while needing a mechanism to selectively remove the unwanted material.⁠[5]

For example, tungsten preferentially deposits on silicon relative to SiO₂, but the selectivity diminishes after only a few cycles. Researchers at North Carolina State University successfully re-passivated the oxide by incorporating hydrogen into the tungsten precursor.[⁠6] Similarly, a group at Argonne National Laboratory found that SiO₂ preferentially deposited on SiO₂ relative to other oxides for only 10 to 15 cycles. Adding acetylacetone (“Precursor C”) as an inhibitor every 5 to 10 cycles — restored selectivity.⁠[7]

Alternatively, or in addition, atomic layer etching (ALE) might be used to remove unwanted material. ALE operates in the same step-by-step manner as ALD. The first half of a cycle reacts with the existing surface, weakening the bond to the underlying material. Then, a second step — typically ion bombardment — removes the weakened layer. For example, in ALE etching of silicon, chlorine gas reacts with the surface to form various SiCl_x compounds. The chlorination process weakens the inter-silicon bonds between the surface and the bulk, and the chlorinated layer is easily sputtered away. The layer-by-layer nature of ALE depends on preferential removal of the surface material relative to the bulk (SiCl_x vs. Si in this case). The “ALE window” is the combination of energy and temperature at which the surface layer is completely removed without damaging the underlying material.

Somewhat counter-intuitively, Keren Kanarik and colleagues at Lam Research found that higher ion energies actually expanded the ALE window for silicon etching. High ion energies with short exposure times delayed the onset of silicon sputtering relative to conventional RIE.[8]

Adding and subtracting, one atomic layer at a time
For a long time, the semiconductor industry has been looking for alternatives to process schemes that deposit material, pattern it, then etch most of it away. Wouldn’t it be simpler to only deposit the material we will ultimately need? Meanwhile, atomic layer deposition has been filling the spaces under nanosheets and inside cavities. Bulk deposition and etch tools are still with us, and will be for the foreseeable future. In more and more cases, though, those tools provide the frame while ALD and ALE processes fill in the details.

References

1. Wenling Li, et al., “Impact of aminosilane and silanol precursor structure on atomic layer deposition process,”Applied Surface Science, Vol 621, 2023,156869, https://doi.org/10.1016/j.apsusc.2023.156869.
2. Kumar, et al., “ALD TiN Surface Defect Reduction for 12nm and Beyond Technologies,” 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), Saratoga Springs, NY, USA, 2020, pp. 1-4, doi: 10.1109/ASMC49169.2020.9185271.
3. Shohei Yamauchi, et al., “Extendibility of self-aligned type multiple patterning for further scaling”, Proc. SPIE 8682, Advances in Resist Materials and Processing Technology XXX, 86821D (29 March 2013); https://doi.org/10.1117/12.2011953
4. Kalkofen, et al., “Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures,” 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 2018, pp. 1-4, doi: 10.1109/NANO.2018.8626235.
5. Rong Chen et al., “Atomic level deposition to extend Moore’s law and beyond,” 2020 Int. J. Extrem. Manuf. 2 022002 DOI 10.1088/2631-7990/ab83e0
6. B Kalanyan, et al., “Using hydrogen to expand the inherent substrate selectivity window during tungsten atomic layer deposition,” 2016 Chem. Mater. 28 117–26 https://doi.org/10.1021/acs.chemmater.5b03319
7. Yanguas-Gil A, Libera J A and Elam J W, “Modulation of the growth per cycle in atomic layer deposition using reversible surface functionalization,” 2013 Chem. Mater. 25 4849–60 https://doi.org/10.1021/cm4029098
8. Keren J. Kanarik, et al., “Universal scaling relationship for atomic layer etching,” J. Vac. Sci. Technol. A 39, 010401 (2021); doi: 10.1116/6.0000762

The post Enabling Advanced Devices With Atomic Layer Processes appeared first on Semiconductor Engineering.

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