A technical paper titled “Metrology for 2D materials: a perspective review from the international roadmap for devices and systems” was published by researchers at Arizona State University, IBM Research, Unity-SC, and the National Institute of Standards and Technology (NIST).

Abstract:

“The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.”

Find the technical paper here. Published April 2024.

Changming Wu et al., Freeform direct-write and rewritable photonic integrated circuits in phase-change thin films.Sci. Adv.10,eadk1361(2024).DOI:10.1126/sciadv.adk1361

Further Reading
Closing The Test And Metrology Gap In 3D-IC Packages
Finding defects in stacked die is a daunting challenge. Equipment, processes, and methodologies all need modifications, and that’s just for starters.
Pressure Builds On Failure Analysis Labs
Goal is to find the causes of failures faster and much earlier — preferably before first silicon.

The post Metrology For 2D Materials: A Review From The International Roadmap For Devices And Systems (NIST, Et Al.) appeared first on Semiconductor Engineering.