A new technical paper titled “IR drop Prediction Based on Machine Learning and Pattern Reduction” was published by researchers at National Tsing Hua University, National Taiwan University of Science and Technology, and MediaTek.

Abstract (partial)
“In this paper, we propose a machine learning-based method to predict IR drop levels and present an algorithm for reducing simulation patterns, which could reduce the time and computing resources required for IR drop analysis within the ECO flow. Experimental results show that our approach can reduce the number of patterns by approximately 50%, thereby decreasing the analysis time while maintaining accuracy.”

Find the technical paper here. Published June 2024.

Yong-Fong Chang, Yung-Chih Chen, Yu-Chen Cheng, Shu-Hong Lin, Che-Hsu Lin, Chun-Yuan Chen, Yu-Hsuan Chen, Yu-Che Lee, Jia-Wei Lin, Hsun-Wei Pao, Shih-Chieh Chang, Yi-Ting Li, and Chun-Yao Wang. 2024. IR drop Prediction Based on Machine Learning and Pattern Reduction. In Proceedings of the Great Lakes Symposium on VLSI 2024 (GLSVLSI ’24). Association for Computing Machinery, New York, NY, USA, 516–519. https://doi.org/10.1145/3649476.3658775

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A new technical paper titled “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application” was published by researchers at National Tsing Hua University and National United University in Taiwan.

Abstract
“Tunneling field effect transistors (TFET) have emerged as promising candidates for integrated circuits beyond conventional metal oxide semiconductor field effect transistors (MOSFET) and could overcome the physical limit, which results in the subthreshold swing (SS) < 60mV/dec at room temperature. In this study, we compare the complementary TFET (CTFET) with complementary metal oxide semiconductor (CMOS) at low temperatures (70K) by using the Gate-All-Around (GAA) architecture. The experiment result clearly shows that the CTEFT inverter has better characteristics than the CMOS inverter in various temperatures. While operating at a fixed temperature, the CMOS inverter performs an excellent on/off ratio and SS, etc. However, when a CMOS inverter operates at varying temperatures, CMOS performs worse than CTFET. This is attributed to the influence of lattice scattering, leading to the instability of CMOS characteristics. Therefore, the CTFET inverter is suitable for operation in environments with varying temperatures, exhibiting high stability, which can be applied in space technology. The simulation tool TCAD has been used to investigate the characteristics of CMOS and CTFET at low temperatures.”

Find the technical paper here. Published June 2024.

C. -C. Tien and Y. -H. Lin, “Vertical-Stack Nanowire Structure of MOS Inverter and TFET Inverter in Low-temperature Application,” in IEEE Access, doi: 10.1109/ACCESS.2024.3410677.

The post Device Characteristics of GAA-Structured CMOS and CTFET Under Varying Temperatures appeared first on Semiconductor Engineering.