Přihlásit se
Power Electronic Packaging for Discrete Dies
A technical paper titled “Substrate Embedded Power Electronics Packaging for Silicon Carbide MOSFETs” was published by researchers at University of Cambridge, University of Warwick, Chongqing University, and SpaceX.
Abstract:
“This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC MOSFET devices. The standard cell has a stray power loop inductance of less than 1 nH and a gate loop inductance of less than 1.5 nH . The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This paper presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.”
Find the technical paper here. Published May 2024.
A. Janabi et al., “Substrate Embedded Power Electronics Packaging for Silicon Carbide MOSFETs,” in IEEE Transactions on Power Electronics, doi: 10.1109/TPEL.2024.3396779.
Related Reading
Big Shifts In Power Electronics Packaging
Packages are becoming more complex to endure high power, high temperature conditions across a variety of applications.
Power Semiconductors: A Deep Dive Into Materials, Manufacturing & Business
Premium Content: How these devices are made and work, challenges in manufacturing, related startups, as well as the reasons why so much effort and resources are being spent to develop new materials, and new processes.</
The post Power Electronic Packaging for Discrete Dies appeared first on Semiconductor Engineering.
