A material with a high electron mobility is like a highway without traffic. Any electrons that flow into the material experience a commuter’s dream, breezing through without any obstacles or congestion to slow or scatter them off their path.

The higher a material’s electron mobility, the more efficient its electrical conductivity, and the less energy is lost or wasted as electrons zip through. Advanced materials that exhibit high electron mobility will be essential for more efficient and sustainable electronic devices that can do more work with less power.

Now, physicists at MIT, the Army Research Lab, and elsewhere have achieved a record-setting level of electron mobility in a thin film of ternary tetradymite — a class of mineral that is naturally found in deep hydrothermal deposits of gold and quartz.

For this study, the scientists grew pure, ultrathin films of the material, in a way that minimized defects in its crystalline structure. They found that this nearly perfect film — much thinner than a human hair — exhibits the highest electron mobility in its class.

The team was able to estimate the material’s electron mobility by detecting quantum oscillations when electric current passes through. These oscillations are a signature of the quantum mechanical behavior of electrons in a material. The researchers detected a particular rhythm of oscillations that is characteristic of high electron mobility — higher than any ternary thin films of this class to date.

“Before, what people had achieved in terms of electron mobility in these systems was like traffic on a road under construction — you’re backed up, you can’t drive, it’s dusty, and it’s a mess,” says Jagadeesh Moodera, a senior research scientist in MIT’s Department of Physics. “In this newly optimized material, it’s like driving on the Mass Pike with no traffic.”

The team’s results, which appear today in the journal Materials Today Physics, point to ternary tetradymite thin films as a promising material for future electronics, such as wearable thermoelectric devices that efficiently convert waste heat into electricity. (Tetradymites are the active materials that cause the cooling effect in commercial thermoelectric coolers.) The material could also be the basis for spintronic devices, which process information using an electron’s spin, using far less power than conventional silicon-based devices.

The study also uses quantum oscillations as a highly effective tool for measuring a material’s electronic performance.

“We are using this oscillation as a rapid test kit,” says study author Hang Chi, a former research scientist at MIT who is now at the University of Ottawa. “By studying this delicate quantum dance of electrons, scientists can start to understand and identify new materials for the next generation of technologies that will power our world.”

Chi and Moodera’s co-authors include Patrick Taylor, formerly of MIT Lincoln Laboratory, along with Owen Vail and Harry Hier of the Army Research Lab, and Brandi Wooten and Joseph Heremans of Ohio State University.

Beam down

The name “tetradymite” derives from the Greek “tetra” for “four,” and “dymite,” meaning “twin.” Both terms describe the mineral’s crystal structure, which consists of rhombohedral crystals that are “twinned” in groups of four — i.e. they have identical crystal structures that share a side.

Tetradymites comprise combinations of bismuth, antimony tellurium, sulfur, and selenium. In the 1950s, scientists found that tetradymites exhibit semiconducting properties that could be ideal for thermoelectric applications: The mineral in its bulk crystal form was able to passively convert heat into electricity.

Then, in the 1990s, the late Institute Professor Mildred Dresselhaus proposed that the mineral’s thermoelectric properties might be significantly enhanced, not in its bulk form but within its microscopic, nanometer-scale surface, where the interactions of electrons is more pronounced. (Heremans happened to work in Dresselhaus’ group at the time.)

“It became clear that when you look at this material long enough and close enough, new things will happen,” Chi says. “This material was identified as a topological insulator, where scientists could see very interesting phenomena on their surface. But to keep uncovering new things, we have to master the material growth.”

To grow thin films of pure crystal, the researchers employed molecular beam epitaxy — a method by which a beam of molecules is fired at a substrate, typically in a vacuum, and with precisely controlled temperatures. When the molecules deposit on the substrate, they condense and build up slowly, one atomic layer at a time. By controlling the timing and type of molecules deposited, scientists can grow ultrathin crystal films in exact configurations, with few if any defects.

“Normally, bismuth and tellurium can interchange their position, which creates defects in the crystal,” co-author Taylor explains. “The system we used to grow these films came down with me from MIT Lincoln Laboratory, where we use high purity materials to minimize impurities to undetectable limits. It is the perfect tool to explore this research.”

Free flow

The team grew thin films of ternary tetradymite, each about 100 nanometers thin. They then tested the film’s electronic properties by looking for Shubnikov-de Haas quantum oscillations — a phenomenon that was discovered by physicists Lev Shubnikov and Wander de Haas, who found that a material’s electrical conductivity can oscillate when exposed to a strong magnetic field at low temperatures. This effect occurs because the material’s electrons fill up specific energy levels that shift as the magnetic field changes.

Such quantum oscillations could serve as a signature of a material’s electronic structure, and the ways in which electrons behave and interact. Most notably for the MIT team, the oscillations could determine a material’s electron mobility: If oscillations exist, it must mean that the material’s electrical resistance is able to change, and by inference, electrons can be mobile, and made to easily flow.

The team looked for signs of quantum oscillations in their new films, by first exposing them to ultracold temperatures and a strong magnetic field, then running an electric current through the film and measuring the voltage along its path, as they tuned the magnetic field up and down.

“It turns out, to our great joy and excitement, that the material’s electrical resistance oscillates,” Chi says. “Immediately, that tells you that this has very high electron mobility.”

Specifically, the team estimates that the ternary tetradymite thin film exhibits an electron mobility of 10,000 cm²/V-s — the highest mobility of any ternary tetradymite film yet measured. The team suspects that the film’s record mobility has something to do with its low defects and impurities, which they were able to minimize with their precise growth strategies. The fewer a material’s defects, the fewer obstacles an electron encounters, and the more freely it can flow.

“This is showing it’s possible to go a giant step further, when properly controlling these complex systems,” Moodera says. “This tells us we’re in the right direction, and we have the right system to proceed further, to keep perfecting this material down to even much thinner films and proximity coupling for use in future spintronics and wearable thermoelectric devices.”

This research was supported in part by the Army Research Office, National Science Foundation, Office of Naval Research, Canada Research Chairs Program and Natural Sciences and Engineering Research Council of Canada.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

A material with a high electron mobility is like a highway without traffic. Any electrons that flow into the material experience a commuter’s dream, breezing through without any obstacles or congestion to slow or scatter them off their path.

The higher a material’s electron mobility, the more efficient its electrical conductivity, and the less energy is lost or wasted as electrons zip through. Advanced materials that exhibit high electron mobility will be essential for more efficient and sustainable electronic devices that can do more work with less power.

Now, physicists at MIT, the Army Research Lab, and elsewhere have achieved a record-setting level of electron mobility in a thin film of ternary tetradymite — a class of mineral that is naturally found in deep hydrothermal deposits of gold and quartz.

For this study, the scientists grew pure, ultrathin films of the material, in a way that minimized defects in its crystalline structure. They found that this nearly perfect film — much thinner than a human hair — exhibits the highest electron mobility in its class.

The team was able to estimate the material’s electron mobility by detecting quantum oscillations when electric current passes through. These oscillations are a signature of the quantum mechanical behavior of electrons in a material. The researchers detected a particular rhythm of oscillations that is characteristic of high electron mobility — higher than any ternary thin films of this class to date.

“Before, what people had achieved in terms of electron mobility in these systems was like traffic on a road under construction — you’re backed up, you can’t drive, it’s dusty, and it’s a mess,” says Jagadeesh Moodera, a senior research scientist in MIT’s Department of Physics. “In this newly optimized material, it’s like driving on the Mass Pike with no traffic.”

The team’s results, which appear today in the journal Materials Today Physics, point to ternary tetradymite thin films as a promising material for future electronics, such as wearable thermoelectric devices that efficiently convert waste heat into electricity. (Tetradymites are the active materials that cause the cooling effect in commercial thermoelectric coolers.) The material could also be the basis for spintronic devices, which process information using an electron’s spin, using far less power than conventional silicon-based devices.

The study also uses quantum oscillations as a highly effective tool for measuring a material’s electronic performance.

“We are using this oscillation as a rapid test kit,” says study author Hang Chi, a former research scientist at MIT who is now at the University of Ottawa. “By studying this delicate quantum dance of electrons, scientists can start to understand and identify new materials for the next generation of technologies that will power our world.”

Chi and Moodera’s co-authors include Patrick Taylor, formerly of MIT Lincoln Laboratory, along with Owen Vail and Harry Hier of the Army Research Lab, and Brandi Wooten and Joseph Heremans of Ohio State University.

Beam down

The name “tetradymite” derives from the Greek “tetra” for “four,” and “dymite,” meaning “twin.” Both terms describe the mineral’s crystal structure, which consists of rhombohedral crystals that are “twinned” in groups of four — i.e. they have identical crystal structures that share a side.

Tetradymites comprise combinations of bismuth, antimony tellurium, sulfur, and selenium. In the 1950s, scientists found that tetradymites exhibit semiconducting properties that could be ideal for thermoelectric applications: The mineral in its bulk crystal form was able to passively convert heat into electricity.

Then, in the 1990s, the late Institute Professor Mildred Dresselhaus proposed that the mineral’s thermoelectric properties might be significantly enhanced, not in its bulk form but within its microscopic, nanometer-scale surface, where the interactions of electrons is more pronounced. (Heremans happened to work in Dresselhaus’ group at the time.)

“It became clear that when you look at this material long enough and close enough, new things will happen,” Chi says. “This material was identified as a topological insulator, where scientists could see very interesting phenomena on their surface. But to keep uncovering new things, we have to master the material growth.”

To grow thin films of pure crystal, the researchers employed molecular beam epitaxy — a method by which a beam of molecules is fired at a substrate, typically in a vacuum, and with precisely controlled temperatures. When the molecules deposit on the substrate, they condense and build up slowly, one atomic layer at a time. By controlling the timing and type of molecules deposited, scientists can grow ultrathin crystal films in exact configurations, with few if any defects.

“Normally, bismuth and tellurium can interchange their position, which creates defects in the crystal,” co-author Taylor explains. “The system we used to grow these films came down with me from MIT Lincoln Laboratory, where we use high purity materials to minimize impurities to undetectable limits. It is the perfect tool to explore this research.”

Free flow

The team grew thin films of ternary tetradymite, each about 100 nanometers thin. They then tested the film’s electronic properties by looking for Shubnikov-de Haas quantum oscillations — a phenomenon that was discovered by physicists Lev Shubnikov and Wander de Haas, who found that a material’s electrical conductivity can oscillate when exposed to a strong magnetic field at low temperatures. This effect occurs because the material’s electrons fill up specific energy levels that shift as the magnetic field changes.

Such quantum oscillations could serve as a signature of a material’s electronic structure, and the ways in which electrons behave and interact. Most notably for the MIT team, the oscillations could determine a material’s electron mobility: If oscillations exist, it must mean that the material’s electrical resistance is able to change, and by inference, electrons can be mobile, and made to easily flow.

The team looked for signs of quantum oscillations in their new films, by first exposing them to ultracold temperatures and a strong magnetic field, then running an electric current through the film and measuring the voltage along its path, as they tuned the magnetic field up and down.

“It turns out, to our great joy and excitement, that the material’s electrical resistance oscillates,” Chi says. “Immediately, that tells you that this has very high electron mobility.”

Specifically, the team estimates that the ternary tetradymite thin film exhibits an electron mobility of 10,000 cm²/V-s — the highest mobility of any ternary tetradymite film yet measured. The team suspects that the film’s record mobility has something to do with its low defects and impurities, which they were able to minimize with their precise growth strategies. The fewer a material’s defects, the fewer obstacles an electron encounters, and the more freely it can flow.

“This is showing it’s possible to go a giant step further, when properly controlling these complex systems,” Moodera says. “This tells us we’re in the right direction, and we have the right system to proceed further, to keep perfecting this material down to even much thinner films and proximity coupling for use in future spintronics and wearable thermoelectric devices.”

This research was supported in part by the Army Research Office, National Science Foundation, Office of Naval Research, Canada Research Chairs Program and Natural Sciences and Engineering Research Council of Canada.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

A material with a high electron mobility is like a highway without traffic. Any electrons that flow into the material experience a commuter’s dream, breezing through without any obstacles or congestion to slow or scatter them off their path.

The higher a material’s electron mobility, the more efficient its electrical conductivity, and the less energy is lost or wasted as electrons zip through. Advanced materials that exhibit high electron mobility will be essential for more efficient and sustainable electronic devices that can do more work with less power.

Now, physicists at MIT, the Army Research Lab, and elsewhere have achieved a record-setting level of electron mobility in a thin film of ternary tetradymite — a class of mineral that is naturally found in deep hydrothermal deposits of gold and quartz.

For this study, the scientists grew pure, ultrathin films of the material, in a way that minimized defects in its crystalline structure. They found that this nearly perfect film — much thinner than a human hair — exhibits the highest electron mobility in its class.

The team was able to estimate the material’s electron mobility by detecting quantum oscillations when electric current passes through. These oscillations are a signature of the quantum mechanical behavior of electrons in a material. The researchers detected a particular rhythm of oscillations that is characteristic of high electron mobility — higher than any ternary thin films of this class to date.

“Before, what people had achieved in terms of electron mobility in these systems was like traffic on a road under construction — you’re backed up, you can’t drive, it’s dusty, and it’s a mess,” says Jagadeesh Moodera, a senior research scientist in MIT’s Department of Physics. “In this newly optimized material, it’s like driving on the Mass Pike with no traffic.”

The team’s results, which appear today in the journal Materials Today Physics, point to ternary tetradymite thin films as a promising material for future electronics, such as wearable thermoelectric devices that efficiently convert waste heat into electricity. (Tetradymites are the active materials that cause the cooling effect in commercial thermoelectric coolers.) The material could also be the basis for spintronic devices, which process information using an electron’s spin, using far less power than conventional silicon-based devices.

The study also uses quantum oscillations as a highly effective tool for measuring a material’s electronic performance.

“We are using this oscillation as a rapid test kit,” says study author Hang Chi, a former research scientist at MIT who is now at the University of Ottawa. “By studying this delicate quantum dance of electrons, scientists can start to understand and identify new materials for the next generation of technologies that will power our world.”

Chi and Moodera’s co-authors include Patrick Taylor, formerly of MIT Lincoln Laboratory, along with Owen Vail and Harry Hier of the Army Research Lab, and Brandi Wooten and Joseph Heremans of Ohio State University.

Beam down

The name “tetradymite” derives from the Greek “tetra” for “four,” and “dymite,” meaning “twin.” Both terms describe the mineral’s crystal structure, which consists of rhombohedral crystals that are “twinned” in groups of four — i.e. they have identical crystal structures that share a side.

Tetradymites comprise combinations of bismuth, antimony tellurium, sulfur, and selenium. In the 1950s, scientists found that tetradymites exhibit semiconducting properties that could be ideal for thermoelectric applications: The mineral in its bulk crystal form was able to passively convert heat into electricity.

Then, in the 1990s, the late Institute Professor Mildred Dresselhaus proposed that the mineral’s thermoelectric properties might be significantly enhanced, not in its bulk form but within its microscopic, nanometer-scale surface, where the interactions of electrons is more pronounced. (Heremans happened to work in Dresselhaus’ group at the time.)

“It became clear that when you look at this material long enough and close enough, new things will happen,” Chi says. “This material was identified as a topological insulator, where scientists could see very interesting phenomena on their surface. But to keep uncovering new things, we have to master the material growth.”

To grow thin films of pure crystal, the researchers employed molecular beam epitaxy — a method by which a beam of molecules is fired at a substrate, typically in a vacuum, and with precisely controlled temperatures. When the molecules deposit on the substrate, they condense and build up slowly, one atomic layer at a time. By controlling the timing and type of molecules deposited, scientists can grow ultrathin crystal films in exact configurations, with few if any defects.

“Normally, bismuth and tellurium can interchange their position, which creates defects in the crystal,” co-author Taylor explains. “The system we used to grow these films came down with me from MIT Lincoln Laboratory, where we use high purity materials to minimize impurities to undetectable limits. It is the perfect tool to explore this research.”

Free flow

The team grew thin films of ternary tetradymite, each about 100 nanometers thin. They then tested the film’s electronic properties by looking for Shubnikov-de Haas quantum oscillations — a phenomenon that was discovered by physicists Lev Shubnikov and Wander de Haas, who found that a material’s electrical conductivity can oscillate when exposed to a strong magnetic field at low temperatures. This effect occurs because the material’s electrons fill up specific energy levels that shift as the magnetic field changes.

Such quantum oscillations could serve as a signature of a material’s electronic structure, and the ways in which electrons behave and interact. Most notably for the MIT team, the oscillations could determine a material’s electron mobility: If oscillations exist, it must mean that the material’s electrical resistance is able to change, and by inference, electrons can be mobile, and made to easily flow.

The team looked for signs of quantum oscillations in their new films, by first exposing them to ultracold temperatures and a strong magnetic field, then running an electric current through the film and measuring the voltage along its path, as they tuned the magnetic field up and down.

“It turns out, to our great joy and excitement, that the material’s electrical resistance oscillates,” Chi says. “Immediately, that tells you that this has very high electron mobility.”

Specifically, the team estimates that the ternary tetradymite thin film exhibits an electron mobility of 10,000 cm²/V-s — the highest mobility of any ternary tetradymite film yet measured. The team suspects that the film’s record mobility has something to do with its low defects and impurities, which they were able to minimize with their precise growth strategies. The fewer a material’s defects, the fewer obstacles an electron encounters, and the more freely it can flow.

“This is showing it’s possible to go a giant step further, when properly controlling these complex systems,” Moodera says. “This tells us we’re in the right direction, and we have the right system to proceed further, to keep perfecting this material down to even much thinner films and proximity coupling for use in future spintronics and wearable thermoelectric devices.”

This research was supported in part by the Army Research Office, National Science Foundation, Office of Naval Research, Canada Research Chairs Program and Natural Sciences and Engineering Research Council of Canada.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.

Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community. 

Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code. 

While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable. 

Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.

A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published March 15 in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device. 

“Our device enables robust magnetization switching without the need for an external magnetic field, opening up unprecedented opportunities for ultra-low power and environmentally sustainable computing technology for big data and AI,” says lead author Deblina Sarkar, the AT&T Career Development Assistant Professor at the MIT Media Lab and Center for Neurobiological Engineering, and head of the Nano-Cybernetic Biotrek research group. “Moreover, the atomically layered structure of our device provides unique capabilities including improved interface and possibilities of gate voltage tunability, as well as flexible and transparent spintronic technologies.”

Sarkar is joined on the paper by first author Shivam Kajale, a graduate student in Sarkar’s research group at the Media Lab; Thanh Nguyen, a graduate student in the Department of Nuclear Science and Engineering (NSE); Nguyen Tuan Hung, an MIT visiting scholar in NSE and an assistant professor at Tohoku University in Japan; and Mingda Li, associate professor of NSE.

Breaking the mirror symmetries 

When electric current flows through heavy metals like platinum or tantalum, the electrons get segregated in the materials based on their spin component, a phenomenon called the spin Hall effect, says Kajale. The way this segregation happens depends on the material, and particularly its symmetries.

“The conversion of electric current to spin currents in heavy metals lies at the heart of controlling magnets electrically,” Kajale notes. “The microscopic structure of conventionally used materials, like platinum, have a kind of mirror symmetry, which restricts the spin currents only to in-plane spin polarization.”

Kajale explains that two mirror symmetries must be broken to produce an “out-of-plane” spin component that can be transferred to a magnetic layer to induce field-free switching. “Electrical current can 'break' the mirror symmetry along one plane in platinum, but its crystal structure prevents the mirror symmetry from being broken in a second plane.”

In their earlier experiments, the researchers used a small magnetic field to break the second mirror plane. To get rid of the need for a magnetic nudge, Kajale and Sarkar and colleagues looked instead for a material with a structure that could break the second mirror plane without outside help. This led them to another 2D material, tungsten ditelluride. The tungsten ditelluride that the researchers used has an orthorhombic crystal structure. The material itself has one broken mirror plane. Thus, by applying current along its low-symmetry axis (parallel to the broken mirror plane), the resulting spin current has an out-of-plane spin component that can directly induce switching in the ultra-thin magnet interfaced with the tungsten ditelluride. 

“Because it's also a 2D van der Waals material, it can also ensure that when we stack the two materials together, we get pristine interfaces and a good flow of electron spins between the materials,” says Kajale. 

Becoming more energy-efficient 

Computer memory and processors built from magnetic materials use less energy than traditional silicon-based devices. And the van der Waals magnets can offer higher energy efficiency and better scalability compared to bulk magnetic material, the researchers note. 

The electrical current density used for switching the magnet translates to how much energy is dissipated during switching. A lower density means a much more energy-efficient material. “The new design has one of the lowest current densities in van der Waals magnetic materials,” Kajale says. “This new design has an order of magnitude lower in terms of the switching current required in bulk materials. This translates to something like two orders of magnitude improvement in energy efficiency.”

The research team is now looking at similar low-symmetry van der Waals materials to see if they can reduce current density even further. They are also hoping to collaborate with other researchers to find ways to manufacture the 2D magnetic switch devices at commercial scale. 

This work was carried out, in part, using the facilities at MIT.nano. It was funded by the Media Lab, the U.S. National Science Foundation, and the U.S. Department of Energy.