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  • ✇Semiconductor Engineering
  • Chip Industry Technical Paper Roundup: June 10Linda Christensen
    New technical papers added to Semiconductor Engineering’s library this week. Technical Paper Research Organizations NeRTCAM: CAM-Based CMOS Implementation of Reference Frames for Neuromorphic Processors Carnegie Mellon University Using Formal Verification to Evaluate Single Event Upsets in a RISC-V Core University of Southampton High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C MIT, Technology Innovation Institute, Ohio State U
     
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Chip Industry Technical Paper Roundup: June 10

✇Semiconductor Engineering
Od: Linda Christensen
10. Červen 2024 v 09:01

New technical papers added to Semiconductor Engineering’s library this week.

Technical Paper Research Organizations
NeRTCAM: CAM-Based CMOS Implementation of Reference Frames for Neuromorphic Processors Carnegie Mellon University
Using Formal Verification to Evaluate Single Event Upsets in a RISC-V Core University of Southampton
High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C MIT, Technology Innovation Institute, Ohio State University, Rice University and Bangladesh University of Engineering and Technology
Comparative Analysis of Thermal Properties in Molybdenum Substrate to Silicon and Glass for a System-on-Foil Integration Rochester Institute of Technology and Lux Semiconductors
Modelling thermomechanical degradation of moulded electronic packages using physics-based digital twin Delft University of Technology and NXP Semiconductors
On the quality of commercial chemical vapour deposited hexagonal boron nitride KAUST and the National Institute for Materials Science in Japan
CMOS IC Solutions for the 77 GHz Radar Sensor in Automotive Applications STMicroelectronics and University of Catania
Imperceptible augmentation of living systems with organic bioelectronic fibres University of Cambridge and University of Macau

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Technical Paper Library home

The post Chip Industry Technical Paper Roundup: June 10 appeared first on Semiconductor Engineering.

  • ✇Semiconductor Engineering
  • A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LEDTechnical Paper Link
    A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory. Abstract: “GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportu
     
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A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED

✇Semiconductor Engineering
Od: Technical Paper Link
2. Květen 2024 v 16:26

A technical paper titled “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor” was published by researchers at the Ohio State University and Sandia National Laboratory.

Abstract:

“GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage) control rather than current controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. The integrated device exhibits excellent gate control, drain current control and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching high efficiency microLED display and communication systems.”

Find the technical paper here. Published April 2024.

Rahman, Sheikh Ifatur, Mohammad Awwad, Chandan Joishi, Zane-Jamal Eddine, Brendan Gunning, Andrew Armstrong, and Siddharth Rajan. “Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor.” arXiv preprint arXiv:2404.05095 (2024).

The post A Micro Light-Emitting Transistor With An N-Channel GaN FET In Series With A GaN LED appeared first on Semiconductor Engineering.

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